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VN0109N3-G PDF预览

VN0109N3-G

更新时间： 2024-11-21 19:55:07
品牌 Logo 应用领域
美国微芯 - MICROCHIP 开关晶体管
页数 文件大小 规格书
5页 612K
描述
350mA, 90V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

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中文翻译

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VN0109N3-G 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：CYLINDRICAL, O-PBCY-T3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：13 weeks
风险等级：1.68其他特性：LOW THRESHOLD
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：90 V
最大漏极电流 (ID)：0.35 A最大漏源导通电阻：3 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：8 pF
JEDEC-95代码：TO-92JESD-30 代码：O-PBCY-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL峰值回流温度（摄氏度）：NOT APPLICABLE
极性/信道类型：N-CHANNEL功耗环境最大值：1 W
最大功率耗散 (Abs)：1 W表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT APPLICABLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

VN0109N3-G 数据手册

 浏览型号VN0109N3-G的Datasheet PDF文件第2页浏览型号VN0109N3-G的Datasheet PDF文件第3页浏览型号VN0109N3-G的Datasheet PDF文件第4页浏览型号VN0109N3-G的Datasheet PDF文件第5页 
Supertex inc.  
VN0109  
N-Channel Enhancement-Mode  
Vertical DMOS FET  
Features  
General Description  
► Free from secondary breakdown  
► Low power drive requirement  
► Ease of paralleling  
This enhancement-mode (normally-off) transistor utilizes  
a vertical DMOS structure and Supertex’s well-proven,  
silicon-gate manufacturing process. This combination  
produces a device with the power handling capabilities  
of bipolar transistors and the high input impedance and  
positive temperature coefficient inherent in MOS devices.  
Characteristic of all MOS structures, this device is free  
from thermal runaway and thermally-induced secondary  
breakdown.  
► Low CISS and fast switching speeds  
► Excellent thermal stability  
► Integral source-drain diode  
► High input impedance and high gain  
Applications  
► Motor controls  
► Converters  
Supertex’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications where  
very low threshold voltage, high breakdown voltage, high  
input impedance, low input capacitance, and fast switching  
speeds are desired.  
► Amplifiers  
► Switches  
► Power supply circuits  
► Drivers (relays, hammers, solenoids, lamps, memories,  
displays, bipolar transistors, etc.)  
Ordering Information  
Product Summary  
RDS(ON)  
(max)  
Part Number  
Package Option  
Packing  
IDSS  
(min)  
BVDSS/BVDGS  
VN0109N3-G  
TO-92  
1000/Bag  
90V  
3.0Ω  
2.0A  
VN0109N3-G P002  
VN0109N3-G P003  
VN0109N3-G P005  
VN0109N3-G P013  
VN0109N3-G P014  
Pin Configuration  
TO-92  
2000/Reel  
-G denotes a lead (Pb)-free / RoHS compliant package.  
Contact factory for Wafer / Die availablity.  
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.  
DRAIN  
SOURCE  
Absolute Maximum Ratings  
Parameter  
Value  
GATE  
TO-92  
Drain-to-source voltage  
Drain-to-gate voltage  
BVDSS  
BVDGS  
±20V  
Gate-to-source voltage  
Product Marking  
Operating and storage temperature  
-55OC to +150OC  
SiVN  
0 1 0 9  
YYWW  
YY = Year Sealed  
Absolute Maximum Ratings are those values beyond which damage to the device may  
occur. Functional operation under these conditions is not implied. Continuous operation  
of the device at the absolute rating level may affect device reliability. All voltages are  
referenced to device ground.  
WW = Week Sealed  
= “Green” Packaging  
Package may or may not include the following marks: Si or  
Typical Thermal Resistance  
TO-92  
Package  
θja  
TO-92  
132OC/W  
Doc.# DSFP-VN0109  
C081913  
Supertex inc.  
www.supertex.com  
12345

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