Datasheet > VN0109N3-GP013

VN0109N3-GP013

更新时间： 2024-11-21 15:57:35

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
5页	633K
描述
Small Signal Field-Effect Transistor,

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技术参数
数据手册

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VN0109N3-GP013 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	CYLINDRICAL, O-PBCY-T3	Reach Compliance Code：	unknown
风险等级：	5.64	其他特性：	LOW THRESHOLD
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	90 V
最大漏极电流 (ID)：	0.35 A	最大漏源导通电阻：	3 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	8 pF
JEDEC-95代码：	TO-92	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
最低工作温度：	-55 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	N-CHANNEL	功耗环境最大值：	1 W
最大功率耗散 (Abs)：	1 W	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

VN0109N3-GP013 数据手册

Supertex inc.

VN0109

N-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

This enhancement-mode (normally-off) transistor utilizes

a vertical DMOS structure and Supertex’s well-proven,

silicon-gate manufacturing process. This combination

produces a device with the power handling capabilities

of bipolar transistors and the high input impedance and

positive temperature coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

► Low C_ISSand fast switching speeds

► Excellent thermal stability

► Integral source-drain diode

► High input impedance and high gain

Applications

► Motor controls

► Converters

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

► Ampliﬁers

► Switches

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

Ordering Information

Product Summary

R_DS(ON)

(max)

Part Number

Package Option

Packing

I_DSS

(min)

BV_DSS/BV_DGS

VN0109N3-G

TO-92

1000/Bag

90V

3.0Ω

2.0A

VN0109N3-G P002

VN0109N3-G P003

VN0109N3-G P005

VN0109N3-G P013

VN0109N3-G P014

Pin Conﬁguration

TO-92

2000/Reel

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

DRAIN

SOURCE

Absolute Maximum Ratings

Parameter

Value

GATE

TO-92

Drain-to-source voltage

Drain-to-gate voltage

BV_DSS

BV_DGS

±20V

Gate-to-source voltage

Product Marking

Operating and storage temperature

-55^OC to +150^OC

SiVN

0 1 0 9

YYWW

YY = Year Sealed

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

WW = Week Sealed

= “Green” Packaging

Package may or may not include the following marks: Si or

Typical Thermal Resistance

TO-92

Package

θ_ja

TO-92

132^OC/W

Doc.# DSFP-VN0109

C081913

Supertex inc.

www.supertex.com

12 3 4 5

中文翻译

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与VN0109N3-GP013相关器件

型号	品牌	获取价格	描述	数据表
VN0109N3-GP014	SUPERTEX	获取价格	Small Signal Field-Effect Transistor,
VN0109N3P002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 90V, 1-Element, N-Channel, Silicon, Metal
VN0109N3P003	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 90V, 1-Element, N-Channel, Silicon, Metal
VN0109N3P004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 90V, 1-Element, N-Channel, Silicon, Metal
VN0109N3P006	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 90V, 1-Element, N-Channel, Silicon, Metal
VN0109N3P007	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 90V, 1-Element, N-Channel, Silicon, Metal
VN0109N3P008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 90V, 1-Element, N-Channel, Silicon, Metal
VN0109N3P012	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 90V, 1-Element, N-Channel, Silicon, Metal
VN0109N3P016	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 90V, 1-Element, N-Channel, Silicon, Metal
VN0109N3P018	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 90V, 1-Element, N-Channel, Silicon, Metal

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