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VN0109NE PDF预览

VN0109NE

更新时间: 2024-11-20 22:15:39
品牌 Logo 应用领域
超科 - SUPERTEX 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
1页 42K
描述
N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array

VN0109NE 技术参数

是否Rohs认证:不符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
最大漏极电流 (Abs) (ID):0.32 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.6 W子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

VN0109NE 数据手册

  

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Small Signal Field-Effect Transistor, 0.35A I(D), 160V, 1-Element, N-Channel, Silicon, Met
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Small Signal Field-Effect Transistor, 0.25A I(D), 160V, 1-Element, N-Channel, Silicon, Met
VN0116N3P001 SUPERTEX

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Small Signal Field-Effect Transistor, 0.25A I(D), 160V, 1-Element, N-Channel, Silicon, Met
VN0116N3P002 SUPERTEX

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Small Signal Field-Effect Transistor, 0.25A I(D), 160V, 1-Element, N-Channel, Silicon, Met
VN0116N3P003 SUPERTEX

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Small Signal Field-Effect Transistor, 0.25A I(D), 160V, 1-Element, N-Channel, Silicon, Met
VN0116N3P004 SUPERTEX

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Small Signal Field-Effect Transistor, 0.25A I(D), 160V, 1-Element, N-Channel, Silicon, Met
VN0116N3P005 SUPERTEX

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Small Signal Field-Effect Transistor, 0.25A I(D), 160V, 1-Element, N-Channel, Silicon, Met
VN0116N3P006 SUPERTEX

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Small Signal Field-Effect Transistor, 0.25A I(D), 160V, 1-Element, N-Channel, Silicon, Met
VN0116N3P008 SUPERTEX

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Small Signal Field-Effect Transistor, 0.25A I(D), 160V, 1-Element, N-Channel, Silicon, Met
VN0116N3P012 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.25A I(D), 160V, 1-Element, N-Channel, Silicon, Met