Datasheet > VMO500-02F

VMO500-02F

更新时间： 2024-11-05 23:45:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
4页	157K
描述
TRANSISTOR \| MOSFET POWER MODULE \| INDEPENDENT \| 200V V(BR)DSS \| 500A I(D)

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中文翻译

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数据手册

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VMO500-02F 数据手册

MegaMOS^TMFET

Module

V_DSS

I_D25

= 200 V

= 500 A

VMO 500-02F

R_{DS(on) typ}= 3.5 mW

N-Channel Enhancement Mode

Symbol

Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

200

T_J= 25°C to 150°C; R_GS= 10 kΩ

E 72873

V_GS

Continuous

Transient

±20

±30

D = Drain

Source

KS = Kelvin Source

Gate

S =

G =

V_GSM

I_D25

I_D80

I_DM

T_C= 25°C

T_C= 80°C

500

370

T_C= 25°C, t_P= 10 µs ¬

T_C= 25°C

2000

P_D

2200

Features

T_J

-40 ...+150

150

°C

International standard package

Direct Copper Bonded Al₂O₃ceramic

base plate

T_JM

T_stg

-40 ... +125

Low R_DS(on)HDMOS^TMprocess

Low package inductance for high

speed switching

V_ISOL

50/60 Hz

_ISOL≤ 1 mA

t = 1 min

t = 1 s

3000

3600

Kelvin Source contact for easy drive

M_d

Mounting torque (M6)

Terminal connection torque (M5)

2.25-2.75/20-25 Nm/lb.in.

2.5-3.7/22-33 Nm/lb.in.

Applications

Weight

typical including screws

250

AC motor speed control for electric

vehicles

DC servo and robot drives

Switched-mode and resonant-mode

power supplies

DC choppers

Symbol

Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min.

typ. max.

Advantages

V_DSS

V_GS= 0 V, I_D= 12 mA

V_DS= 20 V, I_D= 44 mA

200

V_GS(th)

Easy to mount

Space and weight savings

High power density

I_GSS

I_DSS

V_GS= ±20 V DC, V_DS= 0

±500 nA

V_DS= 0.8 V_DSS

V_GS= 0 V T_J= 25°C

T_J= 125°C

2.4 mA

12 mA

Low losses

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

3.5

4.2 mΩ

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Additional current limitation by external leads

IXYS reserves the right to change limits, test conditions and dimensions.

C3 - 18

12 3 4

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