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VMMK-1218 PDF预览

VMMK-1218

更新时间: 2024-11-21 12:01:35
品牌 Logo 应用领域
安华高科 - AVAGO /
页数 文件大小 规格书
12页 837K
描述
0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package

VMMK-1218 数据手册

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VMMK-1218  
0.5 to 18 GHz Low Noise E-PHEMT  
in a Wafer Scale Package  
Data Sheet  
Features  
Description  
Sub-miniature 0402 (1mm x 0.5mm) Surface Mount  
Avago Technologies has combined it’s industry leading  
E-pHEMT technology with a revolutionary chip scale  
package. The VMMK-1218 can produce an LNA with  
high dynamic range, high gain and low noise figure that  
generates off of a single position DC power supply. The  
GaAsCap wafer scale sub-miniature leadless package is  
small and ultra thin, yet can be handled and placed with  
standard 0402 pick and place assembly.  
Leadless Package  
Low height (0.25mm)  
Frequency Range 0.5 to 18 GHz  
[1]  
Enhancement Mode  
0.25 micron gate width  
Tape and Reel packaging option available  
o
Point MTTF > 300 years at 120 C channel temperature  
The use of 0.25 micron gates allow a ultra low noise figure  
(below 1dB from 500 MHz to 12 GHz) with respectable as-  
sociated gain. With a flat transconductance over bias and  
frequency the VMMK-1218 provides excellent linearity  
of over 30 dBm and power over 15 dBm at one dB com-  
pression. This product is easy to use since it requires only  
positive DC voltages for bias and low matching coeffi-  
cients for simple impedance matching to 50 Ω systems.  
Specifications  
0.7 dB Fmin  
9.0 dB Ga  
+22 dBm output 3 order intercept  
+12 dBm output power  
rd  
Applications  
The VMMK-1218 is intended for any 500MHz to 18GHz ap-  
plication including 802.11abgnWLAN, WiMax, BWA 802.16  
& 802.20 and military applications.  
Low Noise and Driver for Cellular/PCS and WCDMA  
Base Stations  
2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook  
computer, access point and mobile wireless  
applications  
GaAsCap 0402, 1.0mm x 0.5mm x 0.25mm  
DBS 10 to 13 GHz receivers  
VSAT and SATCOM 13 to 18 GHz systems  
802.16 & 802.20 BWA systems  
WLL and MMDS Transceivers  
Gate  
Drain  
• BYY  
General purpose discrete E-pHEMT for other ultra low  
Pin Connections (Top View)  
noise applications  
Notes: Top view package marking provides orientation  
Notes:  
1. The Avago enhancement mode pHEMT devices do not require a  
negative gate bias voltage as they are “normally off. They can help  
simplify the design and reduce the cost of receivers and transmitters  
in many applications from 500 MHz to 18 GHz  
Attention: Observe precautions for  
handling electrostatic sensitive devices.  
ESD Machine Model = MM20 V (class A)  
ESD Human Body Model = 100 V (Class 0)  
Refer to Avago Application Note A004R:  
Electrostatic Discharge, Damage and Control.  
gate  
source  
drain  
Notes:  
“b= Device Code  
“YY= Year Code  

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