Datasheet > 射频和微波 > 射频/微波放大器> VMMK-2103-TR1G

VMMK-2103-TR1G

更新时间： 2024-11-25 12:52:47

品牌	Logo	应用领域
安华高科 - AVAGO		射频和微波射频放大器微波放大器
页数	文件大小	规格书
13页	686K
描述
VMMK-2103 0.5 to 6 GHz Bypass E-pHEMT LNA in Wafer Level Package

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中文翻译

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技术参数
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VMMK-2103-TR1G 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	WAFER
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	8.01
Is Samacsys：	N	Base Number Matches：	1

VMMK-2103-TR1G 数据手册

VMMK-2103

0.5 to 6 GHz Bypass E-pHEMT LNA in Wafer Level Package

Data Sheet

Description

Features

Avago’s VMMK-2103 is an easy-to-use GaAs MMIC bypass •ꢀ 1 x 0.5 mm Surface Mount Package

LNA that oﬀers good noise ﬁgure and ﬂat gain from 0.5 to

6 GHz in a miniaturized wafer-level package (WLP). The

bias circuit incorporates a power down feature which is

•ꢀ Ultrathin (0.25mm)

•ꢀ LNA Bypass function

accessed from the input port. This device contains an in- •ꢀ 5V Supply

tegrated bypass switch which engages when the ampliﬁer

is in shut down mode, resulting in an improvement in

•ꢀ RoHS6 + Halogen Free

the input compression point while consuming minimal

current.

Speciﬁcations (at 3GHz, Vd = Vc = 5V, 23mA Typ.)

•ꢀ Noise Figure: 2.1dB typical

The input and output are matched to 50 Ω (better than 2:1

•ꢀ Loss in Bypass Mode: 2.3dB

SWR) across the entire bandwidth; no external matching

•ꢀ Associated Gain: 14dB

is needed. This ampliﬁer is fabricated with enhancement

E-pHEMT technology and industry leading wafer level

package. The WLP leadless package is small and ultra thin

yet can be handled and placed with standard 0402 pick

and place assembly.

•ꢀ Input IP3 in Gain Mode: +8dBm

•ꢀ Input IP3 in Bypass Mode: +21 dBm

•ꢀ Input P1dB in Gain Mode: 0dBm

•ꢀ Input P1dB in Bypass Mode: +17dBm

WLP 0402, 1mm x 0.5mm x 0.25 mm

Applications

•ꢀ Low Noise and Driver for Cellular/PCS and WCDMA

Base Stations

•ꢀ 2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook

computer, access point and mobile wireless applications

•ꢀ 802.16 & 802.20 BWA systems

•ꢀ WLL and MMDS Transceivers

•ꢀ Radar, radio and ECM Systems

Pin Connections (Top View)

Input

/ Vc

Output

/ Vdd

Attention: Observe precautions for

handling electrostatic sensitive devices.

ESD Machine Model =50V

ESD Human Body Model =125V

Refer to Avago Application Note A004R:

Electrostatic Discharge, Damage and Control.

Input

/ Vc

Output

/ Vdd

Amp

Note:

“C”= Device Code

“Y”= Month Code

12 3 4 5 6 7...13

中文翻译

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与VMMK-2103-TR1G相关器件

型号	品牌	获取价格	描述	数据表
VMMK-2203	AVG	获取价格	E-pHEMT Amplifier in a Wafer Scale Package (1 - 10GHz)
VMMK-2203-BLKG	AVAGO	获取价格	900MHz - 11000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, 1 X 0.50 MM, 0.25 MM HEIGHT,
VMMK-2203-TR1G	AVAGO	获取价格	900MHz - 11000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, 1 X 0.50 MM, 0.25 MM HEIGHT,
VMMK-2303-TR1G	AVAGO	获取价格	0.5 to 6 GHz 1.8 V E-pHEMT Shutdown LNA in Wafer Level Package
VMMK-2403	AVAGO	获取价格	2 to 4 GHz GaAs High Linearity LNA in Wafer Level Package
VMMK-2403-BLKG	AVAGO	获取价格	2 to 4 GHz GaAs High Linearity LNA in Wafer Level Package
VMMK-2403-TR1G	AVAGO	获取价格	2 to 4 GHz GaAs High Linearity LNA in Wafer Level Package
VMMK-2503	AVAGO	获取价格	1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package
VMMK-2503-BLKG	AVAGO	获取价格	1000MHz - 12000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, 1 X 0.50 MM, 0.25 MM HEIGHT
VMMK-2503-TR1G	AVAGO	获取价格	1000MHz - 12000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, 1 X 0.50 MM, 0.25 MM HEIGHT

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