Datasheet > VMMK-1225-BLKG

VMMK-1225-BLKG

更新时间： 2024-11-25 19:57:03

品牌	Logo	应用领域
安华高科 - AVAGO		/
页数	文件大小	规格书
13页	687K
描述
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET, ROHS COMPLIANT, 1.05 X 0.55MM, 0.25MM HEIGHT, SUBMINIATURE, LEADLESS PACKAGE-3

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技术参数
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VMMK-1225-BLKG 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	CHIP CARRIER, R-XDCC-N8
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.33.00.01
风险等级：	8.57	Base Number Matches：	1

VMMK-1225-BLKG 数据手册

VMMK-1225

0.5 to 26 GHz Low Noise E-PHEMT

in a Wafer Scale Package

Data Sheet

Description

Features

Avago Technologies has combined it’s industry leading

E-pHEMT technology with a revolutionary chip scale

package. The VMMK-1225 can produce an LNA with

high dynamic range, high gain and low noise ﬁgure that

operates oﬀ of a single position DC power supply. The

GaAsCap wafer scale sub-miniature leadless package is

small and ultra thin, yet can be handled and placed with

standard 0402 pick and place assembly.

• Sub-miniature 0402 (1mm x 0.5mm)

Surface Mount Leadless Package

• Low height (0.25mm)

• Frequency Range DC to 26.5 GHz

[1]

• Enhancement Mode

• 0.25 micron gate length

• Tape and Reel packaging option available

The use of 0.25 micron gates allow a ultra low noise ﬁgure

(below 1dB from 500 MHz to 12 GHz) with respectable as-

sociated gain. With a ﬂat transconductance over bias and

frequency the VMMK-1225 provides excellent linearity

of over 22 dBm and power over 10 dBm at one dB com-

pression. This product is easy to use since it requires only

positive DC voltages for bias and low matching coeﬃ-

cients for simple impedance matching to 50 Ω systems.

The VMMK-1225 is intended for any 500MHz to 26.5GHz

application including 802.11abgn WLAN, WiMax, BWA

802.16 & 802.20 and military applications.

Speciﬁcations

• 0.87dB Fmin

• 11dB Ga

• +23 dBm output 3 order intercept

• +8 dBm output power

Applications

• 2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook

computer, access point and mobile wireless

applications

WLP 0402, 1mm x 0.5mm x 0.25 mm

• DBS 10 to 13 GHz receivers

• VSAT and SATCOM 13 to 18 GHz systems

• 802.16 & 802.20 BWA systems

• WLL and MMDS Transceivers

Gate

Drain

• AYY

• General purpose discrete E-pHEMT for other ultra low

Pin Connections (Top View)

noise applications

Notes:

Notes: Top view package marking provides orientation

1. The Avago enhancement mode pHEMT devices do not require a

negative gate bias voltage as they are “normally oﬀ”. They can help

simplify the design and reduce the cost of receivers and transmitters

in many applications from 500 MHz to 18 GHz

Attention: Observe precautions for

handling electrostatic sensitive devices.

ESD Machine Model = 20 V (class A)

ESD Human Body Model = 100 V (Class O)

Refer to Avago Application Note A004R:

Electrostatic Discharge, Damage and Control.

gate

source

drain

Notes:

“A”= Device Code

“YY”= Year Code

12 3 4 5 6 7...13

中文翻译

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与VMMK-1225-BLKG相关器件

型号	品牌	获取价格	描述	数据表
VMMK-2103	AVAGO	获取价格	E-pHEMT Amplifier in a Wafer Scale Package (0.5 - 6GHz)
VMMK-2103-TR1G	AVAGO	获取价格	VMMK-2103 0.5 to 6 GHz Bypass E-pHEMT LNA in Wafer Level Package
VMMK-2203	AVG	获取价格	E-pHEMT Amplifier in a Wafer Scale Package (1 - 10GHz)
VMMK-2203-BLKG	AVAGO	获取价格	900MHz - 11000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, 1 X 0.50 MM, 0.25 MM HEIGHT,
VMMK-2203-TR1G	AVAGO	获取价格	900MHz - 11000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, 1 X 0.50 MM, 0.25 MM HEIGHT,
VMMK-2303-TR1G	AVAGO	获取价格	0.5 to 6 GHz 1.8 V E-pHEMT Shutdown LNA in Wafer Level Package
VMMK-2403	AVAGO	获取价格	2 to 4 GHz GaAs High Linearity LNA in Wafer Level Package
VMMK-2403-BLKG	AVAGO	获取价格	2 to 4 GHz GaAs High Linearity LNA in Wafer Level Package
VMMK-2403-TR1G	AVAGO	获取价格	2 to 4 GHz GaAs High Linearity LNA in Wafer Level Package
VMMK-2503	AVAGO	获取价格	1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package

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