Datasheet > VL-MM8-1SBN

VL-MM8-1SBN

更新时间： 2024-11-29 12:24:19

品牌	Logo	应用领域
其他 - ETC		动态存储器双倍数据速率
页数	文件大小	规格书
10页	187K
描述
1GB 128Mx64 DDR2 SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VL-MM8-1SBN 数据手册

Product Specifications

PART NO.:

REV: 1.0

VL470T2863A-E6S

General Information

1GB 128Mx64 DDR2 SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN

Description

The VL470T2863A is a 128Mx64 DDR2 SDRAM high density SODIMM. This single rank memory module consists of

eight CMOS 128Mx8 bits with 8 banks DDR2 synchronous DRAMs in BGA packages and a 2K EEPROM in an 8-pin

TSSOP package. This module is a 200-pin small-outline dual in-line memory module and is intended for mounting

into an edge connector socket. Decoupling capacitors are mounted on the printed circuit board for each DDR2

SDRAM.

Features

Pin Description

200-pin, small-outline dual in-line memory module (SODIMM)

JEDEC pin out

Fast data transfer rate: PC2-5300

VDD = VDDQ = 1.8V +/-0.1V

JEDEC standard 1.8V (SSTL_18 compatible)

VDDSPD = 1.7V to 3.6V

Differential data strobe (DQS, DQS# ) option

Differential clock inputs (CK, CK#)

Pin Name

A0~A13

Function

Address Inputs

A10/AP

Address Input/ Autoprecharge

Bank Address Inputs

Data Input/Output

Data Strobes

BA0~BA2

DQ0~DQ63

DQS0~DQS7

DQS0#~DQS7#

DM0~DM7

Four-bit pre-fetch architecture

DLL aligns DQ and DQS transition with CK

Nominal and dynamic on-die termination (ODT)

Programmable CAS# latency: 5 (DDR2-667)

Write latency = Read latency - 1 tCK

Eight internal component banks for concurrent operation

Programmable burst; length (4, 8)

Adjustable data-output drive strength

Auto & self refresh, (8K/64ms refresh)

Serial presence detect (SPD) with EEPROM

Gold edge contacts

Data Strobes Complement

Data Masks

CK0, CK0#,

CK1, CK1#

Clock Inputs

ODT0

CKE0

CS0#

RAS#

CAS#

WE#

On-die Termination Control

Clock Enables

Chip Selects

Lead-free, RoHS compliant

Row Address Strobes

Column Address Strobes

Write Enable

PCB: Height 30.00mm (1.181”), double sided component

Operating temperature (TOPER): - Commercial (0^oC <= Tc <= 95^oC)

- Industrial (-40^oC <= Tc <= 95^oC)

Notes: Double refresh rate is required when 85^oC < TOPER <= 95^oC.

TOPER is DRAM case temperature.

VDD

Voltage Supply

VSS

Ground

SA0~SA1

SDA

SPD Address

SPD Data Input/Output

SPD Clock Input

SPD Voltage Supply

SSTL_18 Reference Voltage

No Connect

Order Information:

SCL

VL470T2863A-E6 S X - X

VDDSPD

VREF

OPERATING TEMPERATURE

Blank: Commercial

S1: Industrial screening

DRAM DIE

(Option)

DRAM MANUFACTURER

S - SAMSUNG

MODULE SPEED

E6: PC2-5300 @ CL5

VL: Lead-free/RoHS

Tel 949.888.2444 – 30052 Tomas, Rancho Santa Margarita, CA 92688 USA – www.virtium.com

12 3 4 5 6 7...10

中文翻译

下载PDF

与VL-MM8-1SBN相关器件

型号	品牌	获取价格	描述	数据表
VL-MM9-2EBN	ETC	获取价格	2GB 256Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN
VL-MM9-4SBN	ETC	获取价格	4GB 512Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN
VLMO11Q1R2	VISHAY	获取价格	Standard 0603 SMD LED
VLMO11Q1R2-GS08	VISHAY	获取价格	Standard 0603 SMD LED
VLMO1300	VISHAY	获取价格	Highbright 0603 ChipLED
VLMO1300-GS08	VISHAY	获取价格	Highbright 0603 ChipLED
VLMO1500	VISHAY	获取价格	Ultrabright 0402 ChipLED
VLMO1500-GS08	VISHAY	获取价格	Ultrabright 0402 ChipLED
VLMO2000	VISHAY	获取价格	Visible LED, Clear,
VLMO2000-GS08	VISHAY	获取价格	Visible LED, SINGLE COLOR LED, SOFT ORANGE, 1.5 mm, GREEN, SMD, 2 PIN

与VL-MM8-1SBN相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

63

产品中心

服务支持

精选活动

关于我们

帮助中心

VL-MM8-1SBN

VL-MM8-1SBN 数据手册

与VL-MM8-1SBN相关器件

与VL-MM8-1SBN相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VL-MM8-1SBN

VL-MM8-1SBN 数据手册

与VL-MM8-1SBN相关器件

与VL-MM8-1SBN相关文章

您还可以找

您在本页遇到什么问题？