Datasheet > VL-MM9-2EBN

VL-MM9-2EBN

更新时间： 2024-11-29 12:24:19

品牌	Logo	应用领域
其他 - ETC		动态存储器双倍数据速率
页数	文件大小	规格书
13页	220K
描述
2GB 256Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN

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VL-MM9-2EBN 数据手册

Product Specifications

PART NO.:

REV: 1.0

VL47D5763A-K0SD-S1

General Information

2GB 256Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN

Description

The VL47D5763A is a 256Mx64 DDR3 SDRAM high density SODIMM. This single rank memory module consists of

eight CMOS 256Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM with

thermal sensor in an 8-pin MLF package. This module is a 204-pin small-outline dual in-line memory module and is

intended for mounting into an edge connector socket. Decoupling capacitors are mounted on the printed circuit board

for each DDR3 SDRAM.

Features

Pin Description

204-pin, small-outline dual in-line memory module (SODIMM)

Fast data transfer rate: PC3-12800

Pin Name

A0~A14

A10/AP

A12/BC#

BA0~BA2

DQ0~DQ63

DQS0~DQS7

DQS0#~DQS7#

DM0~DM7

CK0,CK0#

ODT0

Function

Address Inputs

VDD = VDDQ = 1.35V (1.28V~1.45V) & 1.5V (1.425V~1.575V)

JEDEC standard 1.35V (1.28V~1.45V) & 1.5V (1.425V~1.575V)

VDDSPD = 3.0V to 3.6V

Eight internal component banks for concurrent operation

8-bit pre-fetch architecture

Bi-directional differential data-strobe

Nominal and dynamic on-die termination (ODT)

ZQ calibration support

Programmable CAS# latency: 11 (DDR3-1600)

Programmable burst; length (8)

Average refresh period 7.8 us

Asynchronous reset

Fly-by topology

Address Input/ Autoprecharge

Address Input/ Burst Chop

Bank Address Inputs

Data Input/Output

Data Strobes

Data Strobes Complement

Data Masks

Clock Input

On-die Termination Control

Clock Enables

CKE0

On board terminated command, address, and control bus

Serial presence detect (SPD) EEPROM with thermal sensor

Thermal sensor range: -40^oC to +125^oC (Max +/-3^oC accuracy)

Lead-free, RoHS compliant

CS0#

Chip Selects

RAS#

Row Address Strobes

Column Address Strobes

Write Enable

CAS#

Gold edge contacts

WE#

PCB: Height 30.00mm (1.181”), double sided component

Operating temperature (TOPER): -40^oC to +95^oC (module screening using

commercial DRAM)

VDD

Voltage Supply

VSS

Ground

Notes: Double refresh rate is required when 85^oC < TOPER <= 95^oC.

TOPER is DRAM case temperature (Tc).

SA0~SA1

SDA

SPD Address

SPD Data Input/Output

SPD Clock Input

SCL

EVENT#

VREFCA

VREFDQ

VDDSPD

VTT

Temperature Event Output

Reference Voltage for CA

Reference Voltage for DQ

SPD Voltage Supply

Termination Voltage

No Connect

Order Information:

VL47D5763A - K0 S D-S1

OPERATING TEMPERATURE

S1: Industrial screening

RESET#

DRAM DIE

D-DIE

DRAM MANUFACTURER

S - SAMSUNG

MODULE SPEED

K0: PC3-12800 @ CL11

VL: Lead-free/RoHS

DRAM component: Samsung K4B2G0846D-HYK0

Tel 949.888.2444 – 30052 Tomas, Rancho Santa Margarita, CA 92688 USA – www.virtium.com

12 3 4 5 6 7...13

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与VL-MM9-2EBN相关器件

型号	品牌	获取价格	描述	数据表
VL-MM9-4SBN	ETC	获取价格	4GB 512Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN
VLMO11Q1R2	VISHAY	获取价格	Standard 0603 SMD LED
VLMO11Q1R2-GS08	VISHAY	获取价格	Standard 0603 SMD LED
VLMO1300	VISHAY	获取价格	Highbright 0603 ChipLED
VLMO1300-GS08	VISHAY	获取价格	Highbright 0603 ChipLED
VLMO1500	VISHAY	获取价格	Ultrabright 0402 ChipLED
VLMO1500-GS08	VISHAY	获取价格	Ultrabright 0402 ChipLED
VLMO2000	VISHAY	获取价格	Visible LED, Clear,
VLMO2000-GS08	VISHAY	获取价格	Visible LED, SINGLE COLOR LED, SOFT ORANGE, 1.5 mm, GREEN, SMD, 2 PIN
VLMO20J2L1-GS08	VISHAY	获取价格	Visible LED, Clear,

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