Datasheet > VF30D60A

VF30D60A

更新时间： 2024-11-09 02:51:31

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
3页	1044K
描述
30.0 Ampere Heat Sink Dual Common Anode High Efficiency Half Bridge Rectifiers

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中文翻译

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VF30D60A 数据手册

VF30D20A thru VF30D60A

VF30D20A/VF30D30A/VF30D40A/VF30D50A/VF30D60A

Pb Free Plating Product

30.0 Ampere Heat Sink Dual Common Anode High Efficiency Half Bridge Rectifiers

TO-3PN

Features

ꢀ

Fast switching for high efficiency

Bottom Side Metal Heat Sink

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

ꢀ

Plating Power Supply,Motor Control,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

Mechanical Data

ꢀ

Case: Heatsink TO-3PN open metal package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

Case

Series

ꢀ

Polarity: As marked on diode body

Mounting position: Any

Weight: 0.65 gram approximately

Doubler

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "S"

Negative

Positive

Suffix "C"

Suffix "A"

Suffix "D"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

VF30D30A VF30D50A

VF30D40A VF30D60A

UNIT

SYMBOL

VF30D20A

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

30.0

300

1.3

IF(AV)

(Total Device 2x15A=30A)

Current TC=125 C

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

IFSM

Maximum Instantaneous Forward Voltage

0.98

1.7

@ 15.0 A

(Per Diode/Per Leg)

Maximum DC Reverse Current @TJ=25^oC

At Rated DC Blocking Voltage @TJ=125^oC

5.0

100

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Trr

50-75

150

^oC

Operating Junction and Storage

Temperature Range

J, TSTG

-55 to +150

= 0.5A I = 1 0A Irr = 0.25A.

F R

NOTES : (1) Reverse recovery test conditions I

(2) Thermal Resistance junction to terminal.

(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

Page 1/3

http://www.thinkisemi.com.tw/

Rev.09T

12 3

中文翻译

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与VF30D60A相关器件

型号	品牌	获取价格	描述	数据表
VF30D60C	THINKISEMI	获取价格	30.0 Ampere Heat Sink Dual Common Cathode High Efficiency Half Bridge Rectifiers
VF30D60D	THINKISEMI	获取价格	30.0 Ampere Heat Sink Dual Doubler Polarity High Efficiency Half Bridge Rectifiers
VF30D60S	THINKISEMI	获取价格	30.0 Ampere Heat Sink Dual Series Connection High Efficiency Half Bridge Rectifiers
VF30M120C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF30M120C-M3	VISHAY	获取价格	Trench MOS Schottky technology
VF30M120C-M3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF3-1.8432MHZ	CTS	获取价格	HCMOS/TTL Output Clock Oscillator, 1.8432MHz Nom, HERMETIC SEALED, MINIATURE, CERAMIC, SMD
VF3-1-133MHZ	CTS	获取价格	HCMOS/LSTTL Output Clock Oscillator, 133MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, SMD, 4 P
VF3-1-16.000MHZ	CTS	获取价格	HCMOS/LSTTL Output Clock Oscillator, 16MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, SMD, 4 PI
VF3-1-24.5760MHZ	CTS	获取价格	HCMOS/TTL Output Clock Oscillator

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