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VF30M120C-M3/4W PDF预览

VF30M120C-M3/4W

更新时间: 2022-09-12 11:39:10
品牌 Logo 应用领域
威世 - VISHAY 高压
页数 文件大小 规格书
4页 615K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VF30M120C-M3/4W 数据手册

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New Product  
VF30M120C  
Vishay General Semiconductor  
www.vishay.com  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.52 V at IF = 5 A  
FEATURES  
TMBS®  
ITO-220AB  
• Trench MOS Schottky technology  
• Low forward voltage drop, low power losses  
• High efficiency operation  
• Solder bath temperature 275 °C max. 10 s, per  
JESD 22-B106  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
3
2
Halogen-free according to IEC 61249-2-21 definition  
1
VF30M120C  
PIN 1  
PIN 2  
TYPICAL APPLICATIONS  
PIN 3  
For use in high frequency DC/DC converters, switching  
power supplies, freewheeling diodes, OR-ing diode, and  
reverse battery protection.  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: ITO-220AB  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
2 x 15 A  
120 V  
VRRM  
Base P/N-M3  
commercial grade  
- halogen-free, RoHS compliant, and  
IFSM  
150 A  
VF at IF = 15 A  
TJ max.  
0.68 V  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VF30M120C  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
120  
30  
V
per device  
per diode  
Maximum average forward rectified current  
(fig. 1)  
IF(AV)  
15  
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
Voltage rating of change (rated VR)  
dV/dt  
VAC  
10 000  
1500  
V/μs  
V
Isolation voltage from termal to heatsink t = 1 min  
Operating junction and storage temperature range  
TJ, TSTG  
- 40 to + 150  
°C  
Revision: 11-Jan-12  
Document Number: 89470  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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