New Product
VF30M120C
Vishay General Semiconductor
www.vishay.com
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.52 V at IF = 5 A
FEATURES
TMBS®
ITO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
3
2
• Halogen-free according to IEC 61249-2-21 definition
1
VF30M120C
PIN 1
PIN 2
TYPICAL APPLICATIONS
PIN 3
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
2 x 15 A
120 V
VRRM
Base P/N-M3
commercial grade
- halogen-free, RoHS compliant, and
IFSM
150 A
VF at IF = 15 A
TJ max.
0.68 V
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VF30M120C
UNIT
Maximum repetitive peak reverse voltage
VRRM
120
30
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
15
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
Voltage rating of change (rated VR)
dV/dt
VAC
10 000
1500
V/μs
V
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
°C
Revision: 11-Jan-12
Document Number: 89470
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000