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VE28F008

更新时间： 2024-11-13 22:16:11
品牌 Logo 应用领域
英特尔 - INTEL 存储
页数 文件大小 规格书
26页 383K
描述
8 MBIT (1 MBIT x 8) FLASH MEMORY

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中文翻译

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VE28F008 数据手册

 浏览型号VE28F008的Datasheet PDF文件第2页浏览型号VE28F008的Datasheet PDF文件第3页浏览型号VE28F008的Datasheet PDF文件第4页浏览型号VE28F008的Datasheet PDF文件第5页浏览型号VE28F008的Datasheet PDF文件第6页浏览型号VE28F008的Datasheet PDF文件第7页 
VE28F008  
8 MBIT (1 MBIT x 8) FLASH MEMORY  
Y
Y
High-Density Symmetrically Blocked  
Architecture  
Ð Sixteen 64 Kbyte Blocks  
Very High-Performance Read  
Ð 95 ns Maximum Access Time  
Y
Y
SRAM-Compatible Write Interface  
Y
Y
Avionics Temperature Range  
b
Hardware Data Protection Feature  
Ð Erase/Write Lockout during Power  
Transitions  
a
40 C to 125 C  
Ð
§
§
Extended Cycling Capability  
Ð 10K Block Erase Cycles  
Ð 160K Block Erase  
Y
Y
Industry Standard Packaging  
Ð 40-Lead TSOP  
Cycles per Chip  
ETOXTM III Nonvolatile Flash  
Technology  
Ð 12V Byte Write/Block Erase  
Y
Y
Automated Byte Write and Block Erase  
Ð Command User Interface  
Ð Status Register  
Y
Independent Software Vendor Support  
Ð Microsoft* Flash File System (FFS)  
System Performance Enhancements  
Ð RY/BY Status Output  
Ð Erase Suspend Capability  
Intel’s VE28F008 8-Mbit Flash FileTM Memory revolutionizes the design of high performance and durable  
mass storage memory systems for the Industrial, Avionics and Military markets. With its innovative features  
like low power, blocked architecture, high read/write performance, and expanded temperature range, any  
design, or mission, is free from the dependence on battery backed up memory or highly sensitive and slow  
rotating media drives.  
Using the VE28F008 in a PCMCIA 2.1 Flash Memory card, ATA drive or any size or shape module will allow  
data, application, or operating systems to be updated or collected anywhere, and at anytime. This data on  
demand feature ensures protection from obsolesce through field or in system software updates.  
The VE28F008’s highly integrated Command User Interface and Write State Machine, decreases the size and  
complexity of system software while providing high read, write and erase performance. The sixteen separately  
erasable 64 Kbyte blocks along with a multiple write data protection system, provides assurance that highly  
important data will be available when needed.  
The VE28F008 is offered in a 40-lead TSOP (Thin Small Outline Package) which is capable of performing in  
b
a
temperatures from 40 C to 125 C. It employs advanced CMOS circuitry for systems requiring low power  
consumption and noise immunity. The VE28F008’s 95 ns access time provides superior performance when  
§
§
compared to magnetic mass storage  
Manufactured on Intel’s 0.8 micron ETOXTM III process, the VE28F008 provides the highest levels of quality,  
reliability and cost effectiveness.  
*Microsoft is a trademark of Microsoft Corporation.  
*Other brands and names are the property of their respective owners.  
Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or  
copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make  
changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.  
©
COPYRIGHT INTEL CORPORATION, 1995  
May 1994  
Order Number: 271305-001  
1234567...26

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