Datasheet > V80100P

V80100P

更新时间： 2024-11-28 06:02:03

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	108K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.425 V at IF = 10 A

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V80100P 数据手册

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V80100P

Vishay General Semiconductor

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.425 V at I = 10 A

FEATURES

• Trench MOS Schottky technology

TMBS^®

• Low forward voltage drop, low power

losses

• High efficiency operation

• Low thermal resistance

• Solder dip 260 °C, 40 s

TO-247AD (TO-3P)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

PIN 2

CASE

PIN 1

PIN 3

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

80 A

100 V

500 A

MECHANICAL DATA

Case: TO-247AD (TO-3P)

Epoxy meets UL 94V-0 flammability rating

V_Fat I_F= 40 A

T_Jmax.

0.667 V

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V80100P

UNIT

Maximum repetitive peak reverse voltage

V_RRM

100

per device

Maximum average forward rectified current (Fig. 1)

per diode

I_F(AV)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

I_FSM

500

Peak repetitive reverse current per diode at t_p= 2 µs, 1 kHz

Voltage rate of change (rated V_R)

I_RRM

dV/dt

1.0

10 000

V/µs

°C

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

Document Number: 88979

Revision: 26-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

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