Datasheet > V80100PW_15

V80100PW_15

更新时间： 2024-11-30 01:26:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	81K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V80100PW_15 数据手册

V80100PW

Vishay General Semiconductor

www.vishay.com

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.43 V at I_F= 10 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

TO-3PW

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

PIN 1

PIN 3

PIN 2

CASE

MECHANICAL DATA

Case: TO-3PW

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3

commercial grade

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

2 x 40 A

100 V

- halogen-free, RoHS-compliant, and

450 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

_ASat L = 180 mH

V_Fat I_F= 40 A

T_Jmax.

700 mJ

0.64 V

Polarity: As marked

150 °C

Mounting Torque: 10 in-lbs maximum



Package

TO-3PW

Diode variations

Dual common cathode

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V80100PW

UNIT

Maximum repetitive peak reverse voltage

V_RRM

100

per device

per diode

Maximum average forward rectified current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

450

Non-repetitive avalanche energy at T_J= 25 °C, L = 180 mH per diode

E_AS

700

1.0

Peak repetitive reverse current at t_p= 2 μs, 1 kHz,

T_J= 38 °C 2 °C per diode

I_RRM

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

Revision: 20-Dec-13

Document Number: 89183

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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