Datasheet > V60D120CHM3

V60D120CHM3

更新时间： 2022-02-26 12:40:49

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	100K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V60D120CHM3 数据手册

V60D120C-M3, V60D120CHM3

www.vishay.com

Vishay General Semiconductor

100

Junction to Ambient

T_A= 150 °C

T_A= 125 °C

T_A= 100 °C

T_A= 25 °C

0.1

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

0.01

0.1

100

Instantaneous Forward Voltage (V)

t - Pulse Duration (s)

Fig. 6 - Typical Transient Thermal Impedance Per Device

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

100

Epoxy printed circiut

T_A= 150

board FR4 copper

T_A= 125 °C

thickness = 70μm

T_A= 100 °C

0.1

T_A= 25 °C

0.01

S(cm²)

0.001

90 100

Copper Pad Areas (cm²)

Percent of Rated Peak Reverse Voltage (%)

Fig. 7 - Thermal Resistance Junction-to-Ambient vs.

Copper Pad Areas

Fig. 4 - Typical Reverse Characteristics Per Diode

10 000

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p

-p

1000

100

0.1

100

Reverse Voltage (V)

Fig. 5 - Typical Junction Capacitance Per Diode

Revision: 06-Feb-15

Document Number: 87953

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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