V60H150PW-M3
Vishay General Semiconductor
www.vishay.com
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.52 V at IF = 10 A
FEATURES
TMBS®
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-3PW
TYPICAL APPLICATIONS
PIN 1
PIN 2
CASE
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 3
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-3PW
IF(AV)
2 x 30 A
150 V
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3
- halogen-free, RoHS-compliant, and
VRRM
commercial grade
IFSM
260 A
VF at IF = 30 A
TJ max.
Package
0.65 V
175 °C
TO-3PW
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Diode variation
Dual common cathode
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V60H150PW
UNIT
Maximum repetitive peak reverse voltage
VRRM
150
60
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
A
30
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
260
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-40 to +175
Revision: 04-Dec-13
Document Number: 89945
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000