V60M120C-M3, V60M120CHM3
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.43 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
TO-220AB
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
3
2
1
TYPICAL APPLICATIONS
V60M120C
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 1
PIN 2
K
CASE
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
Base P/N-M3
commercial grade
Base P/NHM3
AEC-Q101 qualified
-
halogen-free, RoHS-compliant, and
IF(AV)
2 x 30 A
120 V
VRRM
IFSM
-
halogen-free, RoHS-compliant, and
300 A
VF at IF = 30 A (TA = 125 °C)
TJ max.
0.69 V
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
175 °C
TO-220AB
Package
Diode variations
Dual common cathode
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V60M120C
UNIT
Maximum repetitive peak reverse voltage
VRRM
120
60
V
per device
Maximum average forward rectified current (fig. 1)
per diode
IF(AV)
30
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
300
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-40 to +175
Revision: 13-Jan-14
Document Number: 87781
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000