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V60DM120CHM3 PDF预览

V60DM120CHM3

更新时间: 2022-02-26 13:24:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 102K
描述
Trench MOS Schottky technology

V60DM120CHM3 数据手册

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V60DM120C-M3, V60DM120CHM3  
www.vishay.com  
Vishay General Semiconductor  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.43 V at IF = 5 A  
FEATURES  
TMBS® eSMP® Series  
• Trench MOS Schottky technology  
TO-263AC (SMPD)  
• Very low profile - typical height of 1.7 mm  
• Ideal for automated placement  
K
• Low forward voltage drop, low power losses  
• High efficiency operation  
1
• AEC-Q101 qualified available:  
- Automotive ordering code: base P/NHM3  
2
Top View  
Bottom View  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
V60DM120C  
PIN 1  
K
HEATSINK  
PIN 2  
TYPICAL APPLICATIONS  
For use in high frequency DC/DC converters, switching  
power supplies, freewheeling diodes, OR-ing diode, and  
reverse battery protection in commercial, inductrial, and  
automotive application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 30 A  
120 V  
MECHANICAL DATA  
VRRM  
Case: TO-263AC (SMPD)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3 - halogen-free, RoHS-compliant  
IFSM  
VF at IF = 30 A (TA = 125 °C)  
TJ max.  
320 A  
0.70 V  
175 °C  
Base P/NHM3  
- halogen-free, RoHS-compliant, and  
Package  
TO-263AC (SMPD)  
AEC-Q101 qualified  
Diode variations  
Dual common cathode  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 and HM3 suffix meets JESD 201 class 2 whisker test  
Polarity: As marked  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V60DM120C  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
120  
60  
V
per device  
per diode  
Maximum average forward rectified current  
(fig. 1)  
IF(AV)  
A
A
30  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
320  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-40 to +175  
Revision: 22-Apr-15  
Document Number: 87618  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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