New Product
V60100C & VB60100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.36 V at I = 5 A
F
F
FEATURES
• Trench MOS Schottky technology
TMBS®
TO-220AB
TO-263AB
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Low thermal resistance
2
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
1
3
2
1
V60100C
VB60100C
• Solder dip 260 °C, 40 s (for TO-220AB)
PIN 1
PIN 2
K
PIN 1
PIN 3
PIN 2
CASE
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
MECHANICAL DATA
VRRM
100 V
320 A
0.66 V
150 °C
Case: TO-220AB and TO-263AB
IFSM
Epoxy meets UL 94V-0 flammability rating
VF at IF = 30 A
TJ max.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for commercial grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs Maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
V60100C
VB60100C
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
V
per device
per diode
60
30
Maximum average forward rectified current (Fig. 1)
IF(AV)
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
per diode
IFSM
320
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
°C
Document Number: 88942
Revision: 16-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1