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V436416S04VCTG-75 PDF预览

V436416S04VCTG-75

更新时间: 2024-11-23 22:16:39
品牌 Logo 应用领域
MOSEL 内存集成电路动态存储器PC时钟
页数 文件大小 规格书
12页 260K
描述
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE

V436416S04VCTG-75 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:DIMM, DIMM168针数:168
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.32风险等级:5.71
访问模式:DUAL BANK PAGE BURST最长访问时间:5.4 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):133 MHz
I/O 类型:COMMONJESD-30 代码:R-XDMA-N168
内存密度:1073741824 bit内存集成电路类型:SYNCHRONOUS DRAM MODULE
内存宽度:64功能数量:1
端口数量:1端子数量:168
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16MX64
输出特性:3-STATE封装主体材料:UNSPECIFIED
封装代码:DIMM封装等效代码:DIMM168
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
电源:3.3 V认证状态:Not Qualified
刷新周期:4096自我刷新:YES
最大待机电流:0.016 A子类别:DRAMs
最大压摆率:1.12 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL
Base Number Matches:1

V436416S04VCTG-75 数据手册

 浏览型号V436416S04VCTG-75的Datasheet PDF文件第2页浏览型号V436416S04VCTG-75的Datasheet PDF文件第3页浏览型号V436416S04VCTG-75的Datasheet PDF文件第4页浏览型号V436416S04VCTG-75的Datasheet PDF文件第5页浏览型号V436416S04VCTG-75的Datasheet PDF文件第6页浏览型号V436416S04VCTG-75的Datasheet PDF文件第7页 
PRELIMINARY  
V436416S04V(C)TG-75  
3.3 VOLT 16M x 64 HIGH PERFORMANCE  
PC133 UNBUFFERED SDRAM MODULE  
Features  
Description  
The V436416S04V(C)TG-75 memory module is  
organized 16,777,216 x 64 bits in a 168 pin dual in  
line memory module (DIMM). The 16M x 64 memo-  
ry module uses 16 Mosel-Vitelic 8M x 8 SDRAM.  
The x64 modules are ideal for use in high perfor-  
mance computer systems where increased memory  
density and fast access times are required.  
168 Pin Unbuffered 16,777,216 x 64 bit  
Oganization SDRAM DIMMs  
Utilizes High Performance 8M x 8 SDRAM in  
TSOPII-54 Packages  
Fully PC Board Layout Compatible to INTEL’S  
Rev 1.0 Module Specification  
Single +3.3V (± 0.3V) Power Supply  
Programmable CAS Latency, Burst Length, and  
Wrap Sequence (Sequential & Interleave)  
Auto Refresh (CBR) and Self Refresh  
All Inputs, Outputs are LVTTL Compatible  
4096 Refresh Cycles every 64 ms  
Serial Present Detect (SPD)  
SDRAM Performance  
Component Used  
-7  
143  
5.4  
Units  
MHz  
ns  
tCK  
tAC  
Clock Frequency (max.)  
Clock Access Time CAS  
Latency = 3  
Supported Latencies at 133 MHz Operation  
CL  
t
t
t
RC  
RCD  
RP  
3
3
3
8
CLK  
V436416S04V(C)TG-75-01  
V436416S04V(C)TG-75 Rev. 1.7 September 2001  
1

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