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V436516R04VATG-10PC PDF预览

V436516R04VATG-10PC

更新时间: 2024-11-24 12:47:19
品牌 Logo 应用领域
MOSEL 内存集成电路动态存储器PC时钟
页数 文件大小 规格书
12页 225K
描述
3.3 VOLT 16M x 64 using 8M x 16 PC100 UNBUFFERED SDRAM MODULE

V436516R04VATG-10PC 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:DIMM, DIMM168针数:168
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.32风险等级:5.56
Is Samacsys:N访问模式:FOUR BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):100 MHzI/O 类型:COMMON
JESD-30 代码:R-XDMA-N168内存密度:1073741824 bit
内存集成电路类型:SYNCHRONOUS DRAM MODULE内存宽度:64
功能数量:1端口数量:1
端子数量:168字数:16777216 words
字数代码:16000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:16MX64输出特性:3-STATE
封装主体材料:UNSPECIFIED封装代码:DIMM
封装等效代码:DIMM168封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY电源:3.3 V
认证状态:Not Qualified刷新周期:4096
自我刷新:YES最大待机电流:0.008 A
子类别:DRAMs最大压摆率:1 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:NO LEAD端子节距:1.27 mm
端子位置:DUALBase Number Matches:1

V436516R04VATG-10PC 数据手册

 浏览型号V436516R04VATG-10PC的Datasheet PDF文件第2页浏览型号V436516R04VATG-10PC的Datasheet PDF文件第3页浏览型号V436516R04VATG-10PC的Datasheet PDF文件第4页浏览型号V436516R04VATG-10PC的Datasheet PDF文件第5页浏览型号V436516R04VATG-10PC的Datasheet PDF文件第6页浏览型号V436516R04VATG-10PC的Datasheet PDF文件第7页 
                      
PRELIMINARY  
V436516R04VATG-10PC  
MOSEL VITELIC  
3.3 VOLT 16M x 64 (using 8M x 16)  
PC100 UNBUFFERED SDRAM MODULE  
Features  
Description  
The V436516R04VATG-10PC memory module is  
organized 16, 777, 216 x 64 bits in a 168 pin dual in  
line memory module (DIMM). The 16M x 64  
memory module uses 8 Mosel-Vitelic 8M x 16  
SDRAM. The x64 modules are ideal for use in high  
performance computer systems where increased  
memory density and fast access times are required.  
  168 Pin Unbuffered 16, 777, 216 x 64 bit  
Oganization SDRAM DIMM  
  Utilizes High Performance 128 Mbit, 8M x 16  
SDRAM in TSOPII-54 Packages  
  Fully PC Board Layout Compatible to INTEL’S  
Rev 1.0 Module Specification  
  Single +3.3V (± 0.3V) Power Supply  
  Programmable CAS Latency, Burst Length, and  
Wrap Sequence (Sequential & Interleave)  
  Auto Refresh (CBR) and Self Refresh  
  All Inputs, Outputs are LVTTL Compatible  
  4096 Refresh Cycles every 64 ms  
  Serial Present Detect (SPD)  
  SDRAM Performance  
Key Component Timing Parameters  
-8PC  
125  
6
Units  
MHz  
ns  
t
t
Clock Frequency (max.)  
CK  
AC  
Clock Access Time CAS  
Latency = 3  
t
Latency = 2  
6
ns  
AC  
  Module Frequency vs AC Parameter  
CL  
Frequency  
(CAS Latency)  
t
t
t
Unit  
RCD  
RP  
RC  
V436516R04VATG-10PC  
100 MHz (PC)  
3
2
2
2
7
CLK  
CLK  
2
2
7
V436516R04VATG-10PC Rev. 1.1 February 2001  
1

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