Datasheet > UTC2SA684

UTC2SA684

更新时间： 2024-11-09 12:19:31

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管局域网
页数	文件大小	规格书
2页	70K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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中文翻译

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数据手册

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UTC2SA684 数据手册

UTC2SA684

PNP EPITAXIAL PLANAR TRANSISTOR

PNP EPITAXIAL PLANAR

TRANSISTOR

DESCRIPTION

The UTC 2SA684 is power amplifier and driver.

FEATURES

*Automatic insertion by radial taping possible.

*Complementary pair with 2SC1384

TO-92L

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS ^{( Ta=25°C ,unless otherwise specified )}

PARAMETER

Collector-Base Voltage

SYMBOL

VCBO

VCEO

VEBO

Icp

VALUE

UNIT

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Collector Current

Collector Current(DC)

Collector Dissipation( Ta=25°C)

Junction Temperature

Storage Temperature

1.5

TSTG

°C

150

-55 ~ +150

ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)

PARAMETER

Collector Cut-Off Current

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

DC Current Gain

SYMBOL

TEST CONDITIONS

VCB=20V,IE=0

MIN TYP MAX UNIT

ICBO

VCBO

VCEO

VEBO

hFE1

0.1

µA

Ic=10µA,IE=0

Ic=2mA,IB=0

IE=10µA,Ic=0

VCE=10V,Ic=500mA

VCE=5V,IB=1A

340

hFE2

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

VCE(sat)

VBE(sat)

Ic=0.5A,IB=50mA

VCE=10V,IB=50mA,f=200MHz

VCB=10V,IE=0,f=1MHz

0.2

0.85

200

0.4

1.2

MHz

Cob

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R202-002,A

中文翻译

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