Datasheet > UTC2SD882S

UTC2SD882S

更新时间： 2024-01-12 20:20:33

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
2页	77K
描述
NPN EPITAXIAL SILICON TRANSISTOR

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中文翻译

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数据手册

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UTC2SD882S 数据手册

UTC2SD882S

NPN EPITAXIAL SILICON TRANSISTOR

MEDIUM POWER LOW VOLTAGE

TRANSISTOR

FEATURES

*High current output up to 3A

*Low saturation voltage

*Complement to 2SB772S

APPLICATIONS

* Audio power amplifier

* DC-DC convertor

* Voltage regulator

TO-92

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS _{(Ta=25°C ,unless otherwise specified )}

PARAMETERS

Collector-base voltage

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector dissipation( Ta=25°C)

Collector current(DC)

Collector current(PULSE)

Base current

0.5

0.6

Junction Temperature

Storage Temperature

TSTG

150

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS _{(Ta=25°C,unless otherwise specified)}

PARAMETER

SYMBOL

TEST CONDITIONS

VCB=30V,IE=0

MIN TYP MAX UNIT

Collector cut-off current

Emitter cut-off current

DC current gain(note 1)

ICBO

IEBO

hFE1

hFE2

1000

VEB=3V,Ic=0

VCE=2V,Ic=20mA

VCE=2V,Ic=1A

200

150

0.3

1.0

100

400

0.5

2.0

Collector-emitter saturation voltage

Base-emitter saturation voltage

Current gain bandwidth product

Output capacitance

VCE(sat)

VBE(sat)

Ic=2A,IB=0.2A

VCE=5V,Ic=0.1A

VCB=10V,IE=0,f=1MHz

MHz

Cob

Note 1:Pulse test:PW<300µs,Duty Cycle<2%

CLASSIFICATION OF hFE2

RANK

RANGE

100-200

160-320

200-400

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R201-024,A

中文翻译

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