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UT62L1024LS-35L PDF预览

UT62L1024LS-35L

更新时间: 2024-11-23 22:16:19
品牌 Logo 应用领域
其他 - ETC 内存集成电路静态存储器光电二极管
页数 文件大小 规格书
14页 235K
描述
128K X 8 BIT LOW POWER CMOS SRAM

UT62L1024LS-35L 数据手册

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UTRON  
UT62L1024  
Rev. 1.7  
128K X 8 BIT LOW POWER CMOS SRAM  
FEATURES  
GENERAL DESCRIPTION  
Access time : 35/55/70ns (max.)  
The UT62L1024 is a 1,048,576-bit low power  
CMOS static random access memory organized  
as 131,072 words by 8 bits. It is fabricated using  
high performance, high reliability CMOS  
technology.  
„
Low power consumption :  
„
Operating : 40/35/30 mA (typical)  
Standby : 2.5µA (typical) L-version  
0.5µA (typical) LL-version  
Power supply range : 2.7V to 3.6V  
„
Easy memory expansion is provided by using  
All inputs and outputs TTL compatible  
„
Fully static operation  
„
two chip enable input.(  
,CE2) It is  
CE1  
Three state outputs  
„
particularly well suited for battery back-up  
nonvolatile memory application.  
Data retention voltage : 2V (min.)  
„
Package : 32-pin 600 mil PDIP  
„
32-pin 450 mil SOP  
The UT62L1024 operates from a single 2.7V~  
3.6V power supply and all inputs and outputs  
are fully TTL compatible.  
32-pin 8x20 mm TSOP-1  
32-pin 8x13.4 mm STSOP  
FUNCTIONAL BLOCK DIAGRAM  
×
2048 512  
A0-A16  
DECODER  
MEMORY  
ARRAY  
Vcc  
Vss  
I/O DATA  
CIRCUIT  
I/O1-I/O8  
COLUMN I/O  
CE1  
CE2  
OE  
CONTROL  
CIRCUIT  
WE  
UTRON TECHNOLOGY INC.  
P80033  
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.  
TEL: 886-3-5777882 FAX: 886-3-5777919  
1

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