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USB6B1 PDF预览

USB6B1

更新时间: 2024-10-13 22:41:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 瞬态抑制器二极管测试光电二极管PC局域网
页数 文件大小 规格书
9页 102K
描述
DATA LINES PROTECTION

USB6B1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOD包装说明:R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.6Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:4368
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:SO-8
Samacsys Released Date:2015-04-16 09:48:08Is Samacsys:N
其他特性:LOW CAPACITANCE最小击穿电压:6 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-G8
JESD-609代码:e4湿度敏感等级:3
最大非重复峰值反向功率耗散:500 W元件数量:1
端子数量:8最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:6 V
最大反向电流:5 µA反向测试电压:5.25 V
子类别:Other Diodes表面贴装:YES
技术:AVALANCHE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

USB6B1 数据手册

 浏览型号USB6B1的Datasheet PDF文件第2页浏览型号USB6B1的Datasheet PDF文件第3页浏览型号USB6B1的Datasheet PDF文件第4页浏览型号USB6B1的Datasheet PDF文件第5页浏览型号USB6B1的Datasheet PDF文件第6页浏览型号USB6B1的Datasheet PDF文件第7页 
USB6Bx  
®
Application Specific Discretes  
A.S.D.  
DATA LINES PROTECTION  
APPLICATIONS  
Where transient overvoltage protection in sensi-  
tive equipment is required, such as:  
- Universal Serial Bus ports  
- RS-423 interfaces  
- RS-485 interfaces  
- ISDN equipment  
- T1/E1 line cards  
- HDSL / ASDL interfaces  
SO8  
FEATURES  
Full diode bridge with integrated clamping protection  
Breakdown voltage : VBR = 6V min.  
Peak pulse power dissipation : PPP = 500W (8/20µs)  
Very low capacitance, compatible with high debit  
data or signal rates.  
DESCRIPTION  
In order to prevent fast transients from leading  
to severe damages in a high speed data sys-  
tem, a specific protection has been developed  
by STMicroelectronics.  
The USB6Bx protects the two input lines  
against overvoltage. Besides, this device also  
keeps the power rails in a safe limit thanks to  
the integrated Transil diode.  
DIL8  
BENEFITS  
Provides protection for each line and between  
the supply voltage and GND : 25A , 8/20µs.  
High ESD protection level : up to level 3 per  
MIL STD 883C-Method 3015-6  
Separated inputs and outputs (so-called 4-point  
structure) to improve ESD susceptibility.  
FUNCTIONAL DIAGRAM  
Comprehensive package pin-out for immediate  
implementation.  
Vcc  
I/01  
I/02  
GND  
Vcc  
I/01  
I/02  
GND  
COMPLIES WITH THE FOLLOWING STANDARDS:  
MIL STD 883C - Method 3015-6  
class 3  
C = 100 pF  
R = 1500 Ω  
3 positive strikes and 3 negative strikes (F = 1 Hz)  
IEC-1000-4-2 level 4  
15 kV (air discharge)  
8 kV (contact discharge)  
TM: ASD and TRANSIL are trademarks of ST Microelectronics.  
August 1999 Ed : 5A  
1/9  

USB6B1 替代型号

型号 品牌 替代类型 描述 数据表
USB6B1RL STMICROELECTRONICS

完全替代

DATA LINES PROTECTION
SP03-6BTG LITTELFUSE

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