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USB6B1E3 PDF预览

USB6B1E3

更新时间： 2024-10-14 15:56:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
2页 298K
描述
Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, SO-8

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USB6B1E3 技术参数

生命周期：Active包装说明：R-PDSO-G8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.78
其他特性：LOW CAPACITANCE最小击穿电压：6 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：R-PDSO-G8
最大非重复峰值反向功率耗散：500 W元件数量：1
端子数量：8封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性：BIDIRECTIONAL最大重复峰值反向电压：5 V
表面贴装：YES技术：AVALANCHE
端子形式：GULL WING端子位置：DUAL
Base Number Matches：1

USB6B1E3 数据手册

 浏览型号USB6B1E3的Datasheet PDF文件第2页 
USB6B1  
Bidirectional TVSarray ™  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This TRANSIENT VOLTAGE SUPPRESSOR (TVS) array is packaged in an SO-8  
configuration giving protection to 1 pair of Bidirectional data lines and the Vbus. It is  
designed for use in applications where protection is required at the board level from  
voltage transients caused by electrostatic discharge (ESD) as defined in IEC 61000-  
4-2, electrical fast transients (EFT) per IEC 61000-4-4 and effects of secondary  
lightning.  
These TVS arrays have a peak power rating of 500 watts for an 8/20 µsec pulse.  
This array is suitable for protection of sensitive circuitry consisting of UNIVERSAL  
SERIAL BUS (USB) I/O transceivers. The capacitance between the I/O data lines  
are minimal to ensure no significant signal distortion or loss at the 12 megabit or  
greater data rate. This feature allows full compatibility with USB port standards.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
SO–8  
FEATURES  
APPLICATIONS / BENEFITS  
•
Protects each data line between Vbus supply and  
•
EIA-RS485 data rates:  
ground  
5 Mbs  
•
•
•
•
•
Complies with MIL-STD-883,Method 3015.7,class 3  
Surge protection per IEC 61000-4-2, IEC 61000-4-4  
Provides electrically isolated protection  
UL 94V-0 Flamability Classification  
LOW CAPACITANCE:  
•
•
•
•
•
10 Base T Ethernet  
USB date rate: 900 Mbs  
Tape & Reel per EIA Standard 481  
13 inch reel; 2,500 pieces (OPTIONAL)  
Carrier tubes; 95 pcs (STANDARD)  
14 pF (Data+ or Data- to ground) (typical)  
7 pF (Data+ to Data-) (typical)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
•
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Peak Pulse Power: 500 watts (8/20 µs, Figure 1)  
Pulse Repetition Rate: < .01%  
•
•
•
•
Molded SO-8 Surface Mount  
Weight 0.066 grams (approximate)  
Marking: Logo, device marking code, date code  
Pin #1 defined by dot on top of package  
ELECTRICAL CHARACTERISTICS  
STAND OFF  
VOLTAGE  
VWM  
BREAKDOWN  
CLAMPING  
VOLTAGE  
VC  
CLAMPING  
VOLTAGE  
VC  
STANDBY  
CURRENT  
ID  
CAPACITANCE  
TEMPERATURE  
COEFFICIENT  
OF VBR  
VOLTAGE  
VBR  
(f=1 MHz)  
C
@0V  
PART  
DEVICE  
@1 mA  
@ 1 Amp  
(Figure 2)  
VOLTS  
@ 5 Amp  
(Figure 2)  
VOLTS  
@ VWM  
αVBR  
NUMBER  
MARKING  
Data + to Data -  
pF  
VOLTS  
MAX  
5.0  
VOLTS  
MIN  
µA  
MAX  
5
mV/°C  
MAX  
3
MAX  
10.8  
MAX  
18  
MAX  
10  
USB6B1  
USB6  
6.0  
Note: Transient Voltage Suppressor (TVS) product is normally selected based on its stand off voltage VWM. Product  
selected voltage should be equal to or greater than the continuous peak operating voltage of the circuit to be  
protected.  
Copyright 2004  
8-19-2004 REV J  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

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