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US1G-T1 PDF预览

US1G-T1

更新时间: 2024-02-19 02:20:29
品牌 Logo 应用领域
WTE /
页数 文件大小 规格书
3页 50K
描述
1.0A SURFACE MOUNT ULTRA FAST RECTIFIER

US1G-T1 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.92
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.4 VJESD-609代码:e0
最大非重复峰值正向电流:30 A元件数量:1
最高工作温度:150 °C最大输出电流:1 A
最大重复峰值反向电压:400 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)

US1G-T1 数据手册

 浏览型号US1G-T1的Datasheet PDF文件第2页浏览型号US1G-T1的Datasheet PDF文件第3页 
WTE  
PO WER SEM ICONDUCTORS  
US1A – US1K  
1.0A SURFACE MOUNT ULTRA FAST RECTIFIER  
Features  
!
Glass Passivated Die Construction  
!
!
!
!
!
!
Ideally Suited for Automatic Assembly  
B
Low Forward Voltage Drop, High Efficiency  
Surge Overload Rating to 30A Peak  
Low Power Loss  
Ultra-Fast Recovery Time  
Plastic Case Material has UL Flammability  
Classification Rating 94V-O  
D
A
F
C
H
G
E
SMA/DO-214AC  
Min  
Mechanical Data  
Dim  
A
Max  
2.90  
4.60  
1.60  
0.305  
5.28  
2.44  
0.203  
1.52  
!
!
Case: Molded Plastic  
2.50  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
B
4.00  
C
1.40  
!
!
!
D
0.152  
4.80  
E
Weight: 0.064 grams (approx.)  
F
2.00  
G
H
0.051  
0.76  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
US1A  
US1B  
US1D  
US1G  
US1J  
US1K  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
280  
600  
420  
800  
560  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TL = 100°C  
1.0  
30  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
IFSM  
A
rated load (JEDEC Method)  
@TA = 55°C  
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
1.0  
1.4  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
10  
500  
µA  
Reverse Recovery Time (Note 1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
trr  
Cj  
50  
100  
nS  
pF  
15  
30  
RJL  
Tj, TSTG  
K/W  
°C  
Operating and Storage Temperature Range  
-50 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. Mounted on P.C. Board with 8.0mm2 land area.  
US1A – US1K  
1 of 3  
© 2002 Won-Top Electronics  

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