Datasheet > US1G-T1

US1G-T1

更新时间： 2024-11-12 22:32:55

品牌	Logo	应用领域
WTE		/
页数	文件大小	规格书
3页	50K
描述
1.0A SURFACE MOUNT ULTRA FAST RECTIFIER

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中文翻译

获取价格

数据手册

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US1G-T1 数据手册

WTE

PO WER SEM ICONDUCTORS

US1A – US1K

1.0A SURFACE MOUNT ULTRA FAST RECTIFIER

Features

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop, High Efficiency

Surge Overload Rating to 30A Peak

Low Power Loss

Ultra-Fast Recovery Time

Plastic Case Material has UL Flammability

Classification Rating 94V-O

SMA/DO-214AC

Min

Mechanical Data

Dim

Max

2.90

4.60

1.60

0.305

5.28

2.44

0.203

1.52

Case: Molded Plastic

2.50

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

4.00

1.40

0.152

4.80

Weight: 0.064 grams (approx.)

2.00

0.051

0.76

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

US1A

US1B

US1D

US1G

US1J

US1K

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

280

600

420

800

560

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current

@T_L= 100°C

1.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

I^FSM

rated load (JEDEC Method)

@T_A= 55°C

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

1.0

1.4

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

500

µA

Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

t^rr

C^j

100

R^ꢀ^JL

T^j,T^STG

K/W

°C

Operating and Storage Temperature Range

-50 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A,

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

US1A – US1K

1 of 3

12 3

中文翻译

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