SMD Ultra Fast Recovery Rectifiers
US1AWF-HF Thru. US1MWF-HF
Reverse Voltage: 50 to 1000 Volts
Forward Current: 1 Amp
RoHS Device
Halogen Free
SOD-123FL
Features
- For surface mounted applications.
0.150(3.80)
0.138(3.50)
- Low profile package.
- Glass passivated chip junction.
- High efficiency.
0.075(1.90)
0.067(1.70)
0.043(1.10)
0.031(0.80)
0.114(2.90)
0.102(2.60)
Mechanical data
- Case: SOD-123FL
0.043(1.10)
0.035(0.90)
- Terminals: Solderable per MIL-STD-750,
method 2026.
0.008(0.20)
0.005(0.12)
0.035(0.90)
0.028(0.70)
Circuit Diagram
Dimensions in inches and (millimeter)
Cathode
Anode
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20%
US1AWF US1BWF US1DWF US1GWF US1JWF US1KWF US1MWF
Symbols
VRRM
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Units
-HF
-HF
-HF
-HF
-HF
-HF
-HF
50
100
200
400
600
800
1000
V
V
V
A
VRMS
35
50
70
140
200
280
400
1
420
600
560
800
700
Maximum DC blocking voltage
VDC
100
1000
Maximum average forward rectified current
at Tc =125°C
IF(AV)
Peak forward surge current, 8.3ms
single half sine-wave superimposed
on rated load
IFSM
30
A
Max. instantaneous forward voltage at 1A
VF
IR
1.0
1.3
1.65
75
V
Maximum DC reverse current
at rated DC blocking voltage
Ta = 25°C
Ta =125°C
5
100
µA
ns
pF
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Typical thermal resistance (Note 3)
trr
50
Cj
15
85
RθJA
°C/W
°C
Operating and storage temperature range
Tj, Tstg
-55 ~ +150
Notes: 1. Measured with IF = 0.5A, IR = 1A, Irr = 0.25A.
2. Measured at 1 MHz and applied reverse voltage of 4 V D.C
3. P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
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QW-JU016
Comchip Technology CO., LTD.