Datasheet > UPG2183T6C-E2-A

UPG2183T6C-E2-A

更新时间： 2024-11-21 12:04:11

品牌	Logo	应用领域
CEL		开关高功率电源
页数	文件大小	规格书
13页	566K
描述
4W HIGH POWER SP4T SWITCH

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UPG2183T6C-E2-A 数据手册

GaAs INTEGRATED CIRCUIT

PG2183T6C

4 W HIGH POWER SP4T SWITCH

DESCRIPTION

The PG2183T6C is a GaAs MMIC SP4T (Single Pole Four Throw) switch which was designed for digital cellular

phone application.

This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.

This device is housed in a 16-pin plastic QFN (Quad Flat Non-leaded) (T6C) package. And this package is able

to high-density surface mounting.

FEATURES

• Supply voltage

: Vbat = 2.9 to 3.2 V (3.0 V TYP.)

: VDD (H) = 1.7 to Vbat V (2.65 V TYP.)

: VDD (L) = 0 to +0.05 V (0 V TYP.)

: Vcont (H) = 1.7 to Vbat V (2.65 V TYP.)

: Vcont (L) = 0 to +0.05 V (0 V TYP.)

: f = 0.5 to 2.5 GHz

• Standby mode voltage

• Switch control voltage

• Operating Frequency

• Low insertion loss

ins1 = 0.4 dB TYP. @ f = 0.5 to 1.0 GHz, Vbat = 3.0 V, VDD = Vcont(H) = 2.65 V, Vcont(L) = 0 V

ins2 = 0.55 dB TYP. @ f = 1.0 to 2.0 GHz, Vbat = 3.0 V, VDD = Vcont(H) = 2.65 V, Vcont(L) = 0 V

ins3 = 0.7 dB TYP. @ f = 2.0 to 2.5 GHz, Vbat = 3.0 V, VDD = Vcont(H) = 2.65 V, Vcont(L) = 0 V

• High isolation

ISL1 = 24 dB TYP. @ f = 0.5 to 1.0 GHz, Vbat = 3.0 V, VDD = Vcont(H) = 2.65 V, Vcont(L) = 0 V

ISL2 = 19 dB TYP. @ f = 1.0 to 2.0 GHz, Vbat = 3.0 V, VDD = Vcont(H) = 2.65 V, Vcont(L) = 0 V

ISL3 = 17 dB TYP. @ f = 2.0 to 2.5 GHz, Vbat = 3.0 V, VDD = Vcont(H) = 2.65 V, Vcont(L) = 0 V

• Handling power

in (0.1 dB) = +37.5 dBm TYP. @ f = 0.9 GHz, Vbat = 3.0 V, VDD = Vcont(H) = 2.65 V, Vcont(L) = 0 V

in (0.1 dB) = +35.0 dBm TYP. @ f = 1.8 GHz, Vbat = 3.0 V, VDD = Vcont(H) = 2.65 V, Vcont(L) = 0 V

• High-density surface mounting : 16-pin plastic QFN (T6C) package (3.0  3.0  0.75 mm)

APPLICATIONS

• Digital cellular phone etc.

ORDERING INFORMATION

Part Number

Order Number

Package

Marking

2183

Supplying Form

 Embossed tape 12 mm wide

PG2183T6C-E2 PG2183T6C-E2-A 16-pin plastic QFN

(T6C) (Pb-Free)

 Pin 13, 14, 15 and 16 face the perforation side of the tape

 Qty 3 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

Part number for sample order: PG2183T6C-A

Caution Although this device is designed to be as robust as possible, ESD (Electrostatic

Discharge) can damage this device. This device must be protected at all times from ESD. Static

charges may easily produce potentials of several kilovolts on the human body or equipment, which

can discharge without detection. Industry-standard ESD precautions must be employed at all times.

Document No. PG10762EJ01V0DS (1st edition)

Date Published May 2009 NS

12 3 4 5 6 7...13

中文翻译

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与UPG2183T6C-E2-A相关器件

型号	品牌	获取价格	描述	数据表
UPG2185T6R	RENESAS	获取价格	GaAs Integrated Circuit SPDT Switch for 2 GHz to 6 GHz
UPG2185T6R	NEC	获取价格	SPDT SWITCH FOR 2 GHz TO 6 GHz
UPG2185T6R-E2	RENESAS	获取价格	GaAs Integrated Circuit SPDT Switch for 2 GHz to 6 GHz
UPG2185T6R-E2	NEC	获取价格	SPDT SWITCH FOR 2 GHz TO 6 GHz
UPG2185T6R-E2-A	RENESAS	获取价格	GaAs Integrated Circuit SPDT Switch for 2 GHz to 6 GHz
UPG2185T6R-E2-A	NEC	获取价格	SPDT SWITCH FOR 2 GHz TO 6 GHz
UPG2189TB	NEC	获取价格	L-BAND 4W HIGH POWER SPST SWITCH
UPG2193T6E-E2-A	RENESAS	获取价格	UPG2193T6E-E2-A
UPG2193T6E-E2-A	NEC	获取价格	Diversity Switch, 915MHz Min, 2170MHz Max, 0.65dB Insertion Loss-Max, 3.50 X 3.50 MM, 0.60
UPG2214TB	RENESAS	获取价格	GaAs Integrated Circuit for L, S-Band SPDT Switch

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