Datasheet > UPG2185T6R

UPG2185T6R

更新时间： 2024-11-21 12:04:47

品牌	Logo	应用领域
瑞萨 - RENESAS		开关光电二极管
页数	文件大小	规格书
11页	122K
描述
GaAs Integrated Circuit SPDT Switch for 2 GHz to 6 GHz

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UPG2185T6R 数据手册

Data Sheet

μPG2185T6R

R09DS0053EJ0300

Rev.3.00

GaAs Integrated Circuit

Nov 22, 2012

SPDT Switch for 2 GHz to 6 GHz

DESCRIPTION

The μPG2185T6R is a GaAs MMIC SPDT (Single Pole Double Throw) switch which was designed for 2 GHz to 6

GHz applications, including dual-band wireless LAN. This device can operate frequency from 2 GHz to 6 GHz, having

the low insertion loss and high isolation.

This device is housed in a 6-pin plastic TSSON (Thin Shrink Small Out-line Non-leaded) (T6R) package and is suitable

for high-density surface mounting.

FEATURES

•

Operating frequency

Switch control voltage

: f = 2.0 to 6.0 GHz

: V_{cont (H)}= 1.8 to 3.6 V (3.0 V TYP.)

: V_{cont (L)}= −0.2 to 0.2 V (0 V TYP.)

<R>

•

Low insertion loss

High isolation

: L_ins1 = 0.40 dB TYP. @ f = 2.0 to 2.5 GHz, V_{cont (H)}= 3.0 V, V_{cont (L)}= 0 V

: L_ins2 = 0.50 dB TYP. @ f = 2.5 to 6.0 GHz, V_{cont (H)}= 3.0 V, V_{cont (L)}= 0 V

: ISL1 = 26 dB TYP. @ f = 2.0 to 2.5 GHz, V_{cont (H)}= 3.0 V, V_{cont (L)}= 0 V

: ISL2 = 25 dB TYP. @ f = 2.5 to 6.0 GHz, V_{cont (H)}= 3.0 V, V_{cont (L)}= 0 V

: P_{in (1 dB)}= +30.5 dBm TYP. @ f = 2.5 GHz, V_{cont (H)}= 3.0 V, V_{cont (L)}= 0 V

: P_{in (1 dB)}= +30.5 dBm TYP. @ f = 6.0 GHz, V_{cont (H)}= 3.0 V, V_{cont (L)}= 0 V

Handling power

High-density surface mounting : 6-pin plastic TSSON (T6R) package (1.0 × 1.0 × 0.37 mm)

APPLICATIONS

•

Wireless LAN (IEEE802.11a/b/g/n)

UWB, near field communications

ORDERING INFORMATION

Part Number

Order Number

Package

Marking

Supplying Form

Embossed tape 8 mm wide

Pin 1, 6 face the perforation side of the tape

Qty 5 kpcs/reel

μPG2185T6R-E2 μPG2185T6R-E2-A 6-pin plastic

•

TSSON

(Pb-Free)

Remark To order evaluation samples, please contact your nearby sales office.

Part number for sample order: μPG2185T6R

CAUTION

Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this

device. This device must be protected at all times from ESD. Static charges may easily produce potentials of

several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard

ESD precautions must be employed at all times.

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R09DS0053EJ0300 Rev.3.00

Nov 22, 2012

Page 1 of 9

12 3 4 5 6 7...11

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与UPG2185T6R相关器件

型号	品牌	获取价格	描述	数据表
UPG2185T6R-E2	RENESAS	获取价格	GaAs Integrated Circuit SPDT Switch for 2 GHz to 6 GHz
UPG2185T6R-E2	NEC	获取价格	SPDT SWITCH FOR 2 GHz TO 6 GHz
UPG2185T6R-E2-A	RENESAS	获取价格	GaAs Integrated Circuit SPDT Switch for 2 GHz to 6 GHz
UPG2185T6R-E2-A	NEC	获取价格	SPDT SWITCH FOR 2 GHz TO 6 GHz
UPG2189TB	NEC	获取价格	L-BAND 4W HIGH POWER SPST SWITCH
UPG2193T6E-E2-A	RENESAS	获取价格	UPG2193T6E-E2-A
UPG2193T6E-E2-A	NEC	获取价格	Diversity Switch, 915MHz Min, 2170MHz Max, 0.65dB Insertion Loss-Max, 3.50 X 3.50 MM, 0.60
UPG2214TB	RENESAS	获取价格	GaAs Integrated Circuit for L, S-Band SPDT Switch
UPG2214TB	NEC	获取价格	NECs W LOW VOLTAGE L, S-BAND SPDT SWITCH
UPG2214TB_1	NEC	获取价格	L, S-BAND SPDT SWITCH

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