Datasheet > UPG110P

UPG110P

更新时间： 2024-11-21 20:16:11

品牌	Logo	应用领域
CEL		射频微波
页数	文件大小	规格书
3页	42K
描述
Wide Band Low Power Amplifier, 2000MHz Min, 8000MHz Max, HERMETICALLY SEALED, CHIP-8

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技术参数
数据手册

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UPG110P 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.17	其他特性：	HIGH RELIABILITY
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	12 dB	最大输入功率 (CW)：	10 dBm
最大工作频率：	8000 MHz	最小工作频率：	2000 MHz
最高工作温度：	125 °C	最低工作温度：	-65 °C
射频/微波设备类型：	WIDE BAND LOW POWER	Base Number Matches：	1

UPG110P 数据手册

UPG110B

UPG110P

2-8 GHz WIDE-BAND AMPLIFIER

GAIN vs. FREQUENCY AND TEMPERATURE

FEATURES

• WIDE-BAND: 2 to 8 GHz

• HIGH GAIN: 15 dB at f = 2 to 8 GHz

T = -25˚C

• MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz

• INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω

T = +25˚C

T = +75˚C

• HERMETICALLY SEALED PACKAGE ASSURES HIGH

RELIABILITY

-5

-10

DESCRIPTION

Frequency, f (GHz)

The UPG110B is a GaAs monolithic integrated circuit de-

signed for use as a wide-band amplifier from 2 GHz to 8 GHz.

The device is most suitable for the gain stage of microwave

communication systems where high gain characteristics are

required. The UPG110 is available in a 4 pin flat package and

in chip form.

ELECTRICAL CHARACTERISTICS¹(TA = 25 ± 3°C, ZS = ZL = 50 Ω, VDD = +8 V, f = 2.0 to 8.0 GHz)

PART NUMBER

PACKAGE OUTLINE

UPG110B/P

FA/CHIP

SYMBOLS

IDD

PARAMETERS

UNITS

MIN

TYP

135

MAX

Supply Current

Power Gain

180

∆GL

Gain Flatness

Input Return Loss

Output Return Loss

Isolation

±1.5

RLIN

RLOUT

ISOL

P1dB

IP3

Output Power at 1 dB Compression Point

SSB Third Order Intercept Point

dBm

Note:

1. When handling the device, a ground strap should be used to prevent electric static discharge (ESD) that can damage the IC.

California Eastern Laboratories

12 3

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