Datasheet > UPG130GR

UPG130GR

更新时间： 2024-11-20 22:17:15

品牌	Logo	应用领域
日电电子 - NEC		开关射频微波光电二极管
页数	文件大小	规格书
12页	88K
描述
L-BAND SPDT SWITCH

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数据手册

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UPG130GR 数据手册

DATA SHEET

GaAs INTEGRATED CIRCUIT

µPG133G

L-BAND SPDT SWITCH

DESCRIPTION

UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular

or cordless telephone application.

The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.

It housed in an original 8 pin SSOP that is smaller than usual 8 pin SOP and easy to install and contributes to

miniaturizing the system.

It can be used in wide-band switching applications.

FEATURES

•

Maximum transmission power : 0.25 W (typ.)

Low insertion loss

High switching speed

Small package

0.6 dB (typ.) at f = 2 GHz

10 ns

8 pins SSOP

APPLICATION

•

Digital cordless telephone

PHS, PCS, DECT etc.

Digital hand-held cellular phone, WLAN

ORDERING INFORMATION

PART NUMBER

PACKAGE

8 pin plastic SSOP

PACKING FORM

Carrier tape width 12 mm.

QTY 2kp/Reel.

µPG133G-E1

For evaluation sample order, please contact your local NEC sales office.

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Control Voltage

VCONT

–6 to +0.6

dBm

Input Power

Total Power Dissipation

Operating Case Temperature

Storage Temperature

Ptot

0.2

T^opt

Tstg

–65 to +90

–65 to +150

˚C

CAUTION: The IC must be handled with care to prevent static discharge because its circuit is composed

of GaAs MES FET.

Document No. P10733EJ2V0DS00 (2nd edition)

Date Published April 1996 P

Printed in Japan

1996

12 3 4 5 6 7...12

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