UPG133G-E1

更新时间： 2024-11-17 22:13:23

品牌	Logo	应用领域
日电电子 - NEC		射频和微波开关射频开关微波开关光电二极管
页数	文件大小	规格书
12页	88K
描述
L-BAND SPDT SWITCH

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中文翻译

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技术参数
数据手册

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UPG133G-E1 技术参数

生命周期：	Obsolete	包装说明：	PLASTIC, SSOP-8
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	其他特性：	HIGH RELIABILITY
构造：	COMPONENT	最大输入功率 (CW)：	25.05 dBm
最大插入损耗：	1 dB	最大工作频率：	2500 MHz
最小工作频率：	100 MHz	最高工作温度：	90 °C
最低工作温度：	-65 °C	射频/微波设备类型：	SPDT
Base Number Matches：	1

UPG133G-E1 数据手册

DATA SHEET

GaAs INTEGRATED CIRCUIT

µPG133G

L-BAND SPDT SWITCH

DESCRIPTION

UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular

or cordless telephone application.

The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.

It housed in an original 8 pin SSOP that is smaller than usual 8 pin SOP and easy to install and contributes to

miniaturizing the system.

It can be used in wide-band switching applications.

FEATURES

•

Maximum transmission power : 0.25 W (typ.)

Low insertion loss

High switching speed

Small package

0.6 dB (typ.) at f = 2 GHz

10 ns

8 pins SSOP

APPLICATION

•

Digital cordless telephone

PHS, PCS, DECT etc.

Digital hand-held cellular phone, WLAN

ORDERING INFORMATION

PART NUMBER

PACKAGE

8 pin plastic SSOP

PACKING FORM

Carrier tape width 12 mm.

QTY 2kp/Reel.

µPG133G-E1

For evaluation sample order, please contact your local NEC sales office.

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Control Voltage

VCONT

–6 to +0.6

dBm

Input Power

Total Power Dissipation

Operating Case Temperature

Storage Temperature

Ptot

0.2

T^opt

Tstg

–65 to +90

–65 to +150

˚C

CAUTION: The IC must be handled with care to prevent static discharge because its circuit is composed

of GaAs MES FET.

Document No. P10733EJ2V0DS00 (2nd edition)

Date Published April 1996 P

Printed in Japan

1996

12 3 4 5 6 7...12

中文翻译

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