Datasheet > UPD4481362GF-C50

UPD4481362GF-C50

更新时间： 2024-12-01 08:42:39

品牌	Logo	应用领域
日电电子 - NEC		静态存储器
页数	文件大小	规格书
40页	223K
描述
ZBT SRAM, 256KX36, 3.2ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100

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中文翻译

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UPD4481362GF-C50 数据手册

PRELIMINARY DATA SHEET

MOS INTEGRATED CIRCUIT

PD4481162, 4481182, 4481322, 4481362

8M-BIT ZEROSB^TMSRAM

PIPELINED OPERATION

Description

The µPD4481162 is a 524,288-word by 16-bit, the µPD4481182 is a 524,288-word by 18-bit, the µPD4481322 is a

262,144-word by 32-bit and the µPD4481362 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with

advanced CMOS technology using full CMOS six-transistor memory cell.

The µPD4481162, µPD4481182, µPD4481322 and µPD4481362 are optimized to eliminate dead cycles for read to

write, or write to read transitions. These ZEROSB static RAMs integrate unique synchronous peripheral circuitry, 2-bit

burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the

single clock input (CLK).

The µPD4481162, µPD4481182, µPD4481322 and µPD4481362 are suitable for applications which require

synchronous operation, high speed, low voltage, high density and wide bit configuration, such as buffer memory.

ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”).

In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal

operation.

The µPD4481162, µPD4481182, µPD4481322 and µPD4481362 are packaged in 100-pin PLASTIC LQFP with a 1.4

mm package thickness or 165-pin TAPE FBGA for high density and low capacitive loading.

Features

• Low voltage core supply (A version : V_DD= 3.3 ± 0.165V, C version : V_DD= 2.5 ± 0.125V)

• Synchronous operation

• 100 percent bus utilization

• Internally self-timed write control

• Burst read / write : Interleaved burst and linear burst sequence

• Fully registered inputs and outputs for pipelined operation

• All registers triggered off positive clock edge

• 3.3V or 2.5V LVTTL Compatible : All inputs and outputs

• Fast clock access time : 3.2 ns (200 MHz), 3.5 ns (167 MHz) , 4.2 ns (133 MHz)

• Asynchronous output enable : /G

• Burst sequence selectable : MODE

• Sleep mode : ZZ (ZZ = Open or Low : Normal operation)

• Separate byte write enable : /BW1 - /BW4 (µPD4481322 and µPD4481362), /BW1 - /BW2 (µPD4481162 and µPD4481182)

• Three chip enables for easy depth expansion

• Common I/O using three state outputs

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M15562EJ1V0DS00 (1st edition)

Date Published June 2001 NS CP(K)

Printed in Japan

2001

12 3 4 5 6 7...40

中文翻译

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与UPD4481362GF-C50相关器件

型号	品牌	获取价格	描述	数据表
UPD4481362GF-C50-A	NEC	获取价格	256KX36 ZBT SRAM, 3.2ns, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100
UPD4481362GF-C60	NEC	获取价格	8M-BIT ZEROSB SRAM PIPELINED OPERATION
UPD4481362GF-C60Y	NEC	获取价格	ZBT SRAM, 256KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4481362GF-C75	NEC	获取价格	8M-BIT ZEROSB SRAM PIPELINED OPERATION
UPD4482161	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION
UPD4482161GF-A65	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION
UPD4482161GF-A65-A	NEC	获取价格	Cache SRAM, 512KX16, 6.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482161GF-A65Y	NEC	获取价格	Cache SRAM, 512KX16, 6.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482161GF-A65Y-A	NEC	获取价格	Cache SRAM, 512KX16, 6.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482161GF-A75	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION

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