Datasheet > 存储 > SRAM> UPD4482161GF-C85Y

UPD4482161GF-C85Y

更新时间： 2024-11-18 13:15:15

品牌	Logo	应用领域
日电电子 - NEC		静态存储器
页数	文件大小	规格书
28页	367K
描述
Cache SRAM, 512KX16, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100

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技术参数
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UPD4482161GF-C85Y 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	14 X 20 MM, PLASTIC, LQFP-100	Reach Compliance Code：	compliant
风险等级：	5.92	Is Samacsys：	N
最长访问时间：	8.5 ns	其他特性：	FLOW-THROUGH ARCHITECTURE
JESD-30 代码：	R-PQFP-G100	JESD-609代码：	e0
长度：	20 mm	内存密度：	8388608 bit
内存集成电路类型：	CACHE SRAM	内存宽度：	16
功能数量：	1	端子数量：	100
字数：	524288 words	字数代码：	512000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	512KX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	LQFP
封装形状：	RECTANGULAR	封装形式：	FLATPACK, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	座面最大高度：	1.7 mm
最大供电电压 (Vsup)：	2.625 V	最小供电电压 (Vsup)：	2.375 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	TIN LEAD	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	QUAD
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	14 mm
Base Number Matches：	1

UPD4482161GF-C85Y 数据手册

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DATA SHEET

MOS INTEGRATED CIRCUIT

PD4482161, 4482181, 4482321, 4482361

8M-BIT CMOS SYNCHRONOUS FAST SRAM

FLOW THROUGH OPERATION

Description

The µPD4482161 is a 524,288-word by 16-bit, the µPD4482181 is a 524,288-word by 18-bit, the µPD4482321 is a

262,144-word by 32-bit and the µPD4482361 is a 262,144-word by 36-bit synchronous static RAM fabricated with

advanced CMOS technology using Full-CMOS six-transistor memory cell.

The µPD4482161, µPD4482181, µPD4482321 and µPD4482361 integrate unique synchronous peripheral circuitry, 2-bit

burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single

clock input (CLK).

The µPD4482161, µPD4482181, µPD4482321 and µPD4482361 are suitable for applications which require synchronous

operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer memory.

ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In

the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal operation.

The µPD4482161, µPD4482181, µPD4482321 and µPD4482361 are packaged in 100-pin PLASTIC LQFP with a 1.4

mm package thickness for high density and low capacitive loading.

Features

• 3.3 V or 2.5 V core supply

• Synchronous operation

• Operating temperature : T_A= 0 to 70 °C (-A65, -A75, -A85, -C75, -C85)

T_A= −40 to +85 °C (-A65Y, -A75Y, -A85Y, -C75Y, -C85Y)

• Internally self-timed write control

• Burst read / write : Interleaved burst and linear burst sequence

• Fully registered inputs for flow through operation

• All registers triggered off positive clock edge

• 3.3 V or 2.5 V LVTTL Compatible : All inputs and outputs

• Fast clock access time : 6.5 ns (133 MHz), 7.5 ns (117 MHz), 8.5 ns (100 MHz)

• Asynchronous output enable : /G

• Burst sequence selectable : MODE

• Sleep mode : ZZ (ZZ = Open or Low : Normal operation)

• Separate byte write enable : /BW1 to /BW4, /BWE (µPD4482321, µPD4482361)

/BW1, /BW2, /BWE (µPD4482161, µPD4482181)

Global write enable : /GW

• Three chip enables for easy depth expansion

• Common I/O using three state outputs

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M14521EJ3V0DS00 (3rd edition)

Date Published December 2002 NS CP(K)

Printed in Japan

The mark shows major revised points.

2000

12 3 4 5 6 7...28

中文翻译

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与UPD4482161GF-C85Y相关器件

型号	品牌	获取价格	描述	数据表
UPD4482161GF-C85Y-A	NEC	获取价格	Cache SRAM, 512KX16, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482162	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT
UPD4482162GF-A44	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT
UPD4482162GF-A44Y	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT
UPD4482162GF-A44Y-A	NEC	获取价格	暂无描述
UPD4482162GF-A50	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT
UPD4482162GF-A50-A	NEC	获取价格	暂无描述
UPD4482162GF-A50Y	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT
UPD4482162GF-A50Y-A	NEC	获取价格	暂无描述
UPD4482162GF-A60	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT

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