Datasheet > UPD43256B-L

UPD43256B-L

更新时间： 2024-11-26 22:52:35

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
24页	174K
描述
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

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中文翻译

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UPD43256B-L 数据手册

DATA SHEET

MOS INTEGRATED CIRCUIT

µPD43256B

256K-BIT CMOS STATIC RAM

32K-WORD BY 8-BIT

Description

The µPD43256B is a high speed, low power, and 262, 144 bits (32,768 words by 8 bits) CMOS static RAM.

Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations.

The µPD43256B is packed in 28-pin plastic DIP, 28-pin plastic SOP and 28-pin plastic TSOP (I).

Features

•

32,768 words by 8 bits organization

Fast access time: 70, 85, 100, 120, 150 ns (MAX.)

Wide voltage range (A version: V^CC= 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)

2 V data retention

OE input for easy application

Operating

supply voltage

Operating

temperature

°C

Standby

supply current

µA (MAX.)

Data retention

supply current^{Note 1}

µA (MAX.)

Access time

ns (MAX.)

Part number

µPD43256B-L

µPD43256B-LL

µPD43256B-A

70, 85

4.5 to 5.5

0 to 70

Note 2

85, 100

, 120

3.0 to 5.5

2.7 to 5.5

Note 2

µPD43256B-B

100, 120, 150

Notes 1. TA ≤ 40 ˚C, VCC = 3 V

2. Access time : 85 ns (MAX.) (V^CC= 4.5 to 5.5 V)

Version X and P

This data sheet can be applied to the version X and P. Each version is identified with its lot number. Letter X in

the fifth character position in a lot number signifies version X, letter P, version P.

JAPAN

D43256B

Lot number

The information in this document is subject to change without notice.

Document No. M10770EJ9V0DS00 (9th edition)

Date Published May 1997 N

The mark

shows major revised points.

Printed in Japan

1990, 1993, 1994

12 3 4 5 6 7...24

中文翻译

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UPD43256B-X_06	NEC	获取价格	256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
UPD43256B-XXL	NEC	获取价格	256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
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