Datasheet > UPD43257B_06

UPD43257B_06

更新时间： 2024-11-27 04:48:07

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
24页	198K
描述
MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

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UPD43257B_06 数据手册

DATA SHEET

MOS INTEGRATED CIRCUIT

μPD43257B

256K-BIT CMOS STATIC RAM

32K-WORD BY 8-BIT

Description

The μPD43257B is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.

Battery backup is available. And the μPD43257B has two chip enable pins (/CE1, CE2) to extend the capacity.

The μPD43257B is packed in 28-pin PLASTIC DIP and 28-pin PLASTIC SOP.

Features

• 32,768 words by 8 bits organization

• Fast access time: 70, 85 ns (MAX.)

• Low V^CCdata retention: 2.0 V (MIN.)

• Two Chip Enable inputs: /CE1, CE2

Part number

Access time

ns (MAX.)

Operating supply Operating ambient

Supply current

At standby

voltage

temperature

°C

At operating

mA (MAX.)

At data retention

μA (MAX.)

μA (MAX.) ^Note

μPD43257B-xxL

μPD43257B-xxLL

70, 85

4.5 to 5.5

0 to 70

Note TA ≤ 40 °C, VCC = 3.0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M10693EJ9V0DS00 (9th edition)

1992

Date Published June 2006 NS CP (K)

Printed in Japan

12 3 4 5 6 7...24

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