Datasheet > 存储 > SRAM> UPD431000AGZ-A10X-KJH

UPD431000AGZ-A10X-KJH

更新时间： 2024-11-14 22:05:27

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
28页	209K
描述
1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UPD431000AGZ-A10X-KJH 数据手册

浏览型号UPD431000AGZ-A10X-KJH的Datasheet PDF文件第2页

浏览型号UPD431000AGZ-A10X-KJH的Datasheet PDF文件第3页

浏览型号UPD431000AGZ-A10X-KJH的Datasheet PDF文件第4页

浏览型号UPD431000AGZ-A10X-KJH的Datasheet PDF文件第5页

浏览型号UPD431000AGZ-A10X-KJH的Datasheet PDF文件第6页

DATA SHEET

MOS INTEGRATED CIRCUIT

µPD431000A-X

1M-BIT CMOS STATIC RAM

128K-WORD BY 8-BIT

EXTENDED TEMPERATURE OPERATION

Description

The µPD431000A-X is a high speed, low power, and 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM.

The µPD431000A-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.

In addition to this, A and B versions are low voltage operations.

The µPD431000A-X is packed in 32-pin PLASTIC SOP, 32-pin PLASTIC TSOP (I) (8 × 13.4 mm) and (8 × 20 mm).

Features

• 131,072 words by 8 bits organization

• Fast access time: 70, 85, 100, 120, 150 ns (MAX.)

• Low voltage operation (A version: V^CC= 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)

• Operating ambient temperature: T^A= –25 to +85 °C

• Low VCC data retention: 2.0 V (MIN.)

• Output Enable input for easy application

• Two Chip Enable inputs: /CE1, CE2

Part number

Access time

ns (MAX.)

Operating supply Operating ambient

Supply current

voltage

temperature

°C

At operating At standby At data retention

mA (MAX.) µA (MAX.)

µA (MAX.) ^Note1

µPD431000A-xxX

µPD431000A-AxxX

70, 85

4.5 to 5.5

3.0 to 5.5

2.7 to 5.5

–25 to +85

2.5

70 ^Note2, 100

35 ^Note3

30 ^Note4

26 ^Note5

22 ^Note6

µPD431000A-BxxX 70 ^Note2, 100, 120, 150

Notes 1. T^A≤ 40 °C

2. VCC = 4.5 to 5.5 V

3. 70 mA (VCC > 3.6 V)

4. 70 mA (VCC > 3.3 V)

5. 50 µA (VCC > 3.6 V)

6. 50 µA (VCC > 3.3 V)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M10430EJ9V0DS00 (9th edition)

The mark ★ shows major revised points.

Date Published April 2002 NS CP (K)

Printed in Japan

1995

12 3 4 5 6 7...28

中文翻译

下载PDF

与UPD431000AGZ-A10X-KJH相关器件

型号	品牌	获取价格	描述	数据表
UPD431000AGZ-A10X-KJH-A	RENESAS	获取价格	128KX8 STANDARD SRAM, 100ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP1-32
UPD431000AGZ-A10X-KJH-A	NEC	获取价格	Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, PLASTIC, TSOP1-32
UPD431000AGZ-A10X-KKH	NEC	获取价格	1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
UPD431000AGZ-A10X-KKH-A	NEC	获取价格	128KX8 STANDARD SRAM, 100ns, PDSO32, 8 X 20 MM, PLASTIC, REVERSE, TSOP1-32
UPD431000AGZ-A12-KJH	NEC	获取价格	Standard SRAM, 128KX8, 120ns, CMOS, PDSO32, 8 X 20 MM, PLASTIC, TSOP1-32
UPD431000AGZ-A12-KKH	NEC	获取价格	Standard SRAM, 128KX8, 120ns, CMOS, PDSO32, 8 X 20 MM, PLASTIC, REVERSE, TSOP1-32
UPD431000AGZ-A12X-KJH	ETC	获取价格	x8 SRAM
UPD431000AGZ-A12X-KKH	ETC	获取价格	x8 SRAM
UPD431000AGZ-B10-KJH	NEC	获取价格	1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT
UPD431000AGZ-B10-KJH-A	NEC	获取价格	Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, PLASTIC, TSOP-32

与UPD431000AGZ-A10X-KJH相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

11
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

4
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

30
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

13

产品中心

服务支持

精选活动

关于我们

帮助中心

UPD431000AGZ-A10X-KJH

UPD431000AGZ-A10X-KJH 数据手册

与UPD431000AGZ-A10X-KJH相关器件

与UPD431000AGZ-A10X-KJH相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UPD431000AGZ-A10X-KJH

UPD431000AGZ-A10X-KJH 数据手册

与UPD431000AGZ-A10X-KJH相关器件

与UPD431000AGZ-A10X-KJH相关文章

您还可以找

您在本页遇到什么问题？