UPD431000AGZ-B15-A

更新时间： 2024-11-15 13:15:15

品牌	Logo	应用领域
日电电子 - NEC		存储内存集成电路静态存储器光电二极管
页数	文件大小	规格书
32页	227K
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DATA SHEET

MOS INTEGRATED CIRCUIT

µPD431000A

1M-BIT CMOS STATIC RAM

128K-WORD BY 8-BIT

Description

The µPD431000A is a high speed, low power, and 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM.

The µPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In

addition to this, A and B versions are low voltage operations.

The µPD431000A is packed in 32-pin PLASTIC DIP, 32-pin PLASTIC SOP and 32-pin PLASTIC TSOP (I) (8 × 13.4

mm) and (8 × 20 mm).

Features

• 131,072 words by 8 bits organization

• Fast access time: 70, 85, 100, 120, 150 ns (MAX.)

• Low voltage operation (A version: V^CC= 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)

• Operating ambient temperature: T^A= 0 to 70 °C

• Low V^CCdata retention: 2.0 V (MIN.)

• Output Enable input for easy application

• Two Chip Enable inputs: /CE1, CE2

Part number

Access time

ns (MAX.)

Operating supply Operating ambient

Supply current

voltage

temperature

°C

At operating At standby At data retention

mA (MAX.) µA (MAX.)

µA (MAX.) ^Note1

µPD431000A-xxL

µPD431000A-xxLL

µPD431000A-Axx

µPD431000A-Bxx

70, 85

4.5 to 5.5

0 to 70

100

70 ^Note2, 100

3.0 to 5.5

2.7 to 5.5

35 ^Note3

30 ^Note4

13 ^Note5

11 ^Note6

70 ^Note2, 100, 120, 150

Notes 1. T^A≤ 40 °C

2. VCC = 4.5 to 5.5 V

3. 70 mA (VCC > 3.6 V)

4. 70 mA (VCC > 3.3 V)

5. 20 µA (VCC > 3.6 V)

6. 20 µA (VCC > 3.3 V)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M11657EJBV0DS00 (11th edition)

Date Published April 2002 NS CP (K)

Printed in Japan

The mark ★ shows major revised points.

1990, 1993, 1995

12 3 4 5 6 7...32

中文翻译

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