Datasheet > 暂无类别数据> UPD431000AGW-85LL-A

UPD431000AGW-85LL-A

更新时间： 2024-12-01 12:58:39

品牌	Logo	应用领域
日电电子 - NEC		存储内存集成电路静态存储器光电二极管
页数	文件大小	规格书
32页	227K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UPD431000AGW-85LL-A 数据手册

浏览型号UPD431000AGW-85LL-A的Datasheet PDF文件第2页

浏览型号UPD431000AGW-85LL-A的Datasheet PDF文件第3页

浏览型号UPD431000AGW-85LL-A的Datasheet PDF文件第4页

浏览型号UPD431000AGW-85LL-A的Datasheet PDF文件第5页

浏览型号UPD431000AGW-85LL-A的Datasheet PDF文件第6页

DATA SHEET

MOS INTEGRATED CIRCUIT

µPD431000A

1M-BIT CMOS STATIC RAM

128K-WORD BY 8-BIT

Description

The µPD431000A is a high speed, low power, and 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM.

The µPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In

addition to this, A and B versions are low voltage operations.

The µPD431000A is packed in 32-pin PLASTIC DIP, 32-pin PLASTIC SOP and 32-pin PLASTIC TSOP (I) (8 × 13.4

mm) and (8 × 20 mm).

Features

• 131,072 words by 8 bits organization

• Fast access time: 70, 85, 100, 120, 150 ns (MAX.)

• Low voltage operation (A version: V^CC= 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)

• Operating ambient temperature: T^A= 0 to 70 °C

• Low V^CCdata retention: 2.0 V (MIN.)

• Output Enable input for easy application

• Two Chip Enable inputs: /CE1, CE2

Part number

Access time

ns (MAX.)

Operating supply Operating ambient

Supply current

voltage

temperature

°C

At operating At standby At data retention

mA (MAX.) µA (MAX.)

µA (MAX.) ^Note1

µPD431000A-xxL

µPD431000A-xxLL

µPD431000A-Axx

µPD431000A-Bxx

70, 85

4.5 to 5.5

0 to 70

100

70 ^Note2, 100

3.0 to 5.5

2.7 to 5.5

35 ^Note3

30 ^Note4

13 ^Note5

11 ^Note6

70 ^Note2, 100, 120, 150

Notes 1. T^A≤ 40 °C

2. VCC = 4.5 to 5.5 V

3. 70 mA (VCC > 3.6 V)

4. 70 mA (VCC > 3.3 V)

5. 20 µA (VCC > 3.6 V)

6. 20 µA (VCC > 3.3 V)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M11657EJBV0DS00 (11th edition)

Date Published April 2002 NS CP (K)

Printed in Japan

The mark ★ shows major revised points.

1990, 1993, 1995

12 3 4 5 6 7...32

中文翻译

下载PDF

与UPD431000AGW-85LL-A相关器件

型号	品牌	获取价格	描述	数据表
UPD431000AGW-A10	NEC	获取价格	1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT
UPD431000AGW-A10-A	NEC	获取价格	暂无描述
UPD431000AGW-A12	NEC	获取价格	Standard SRAM, 128KX8, 120ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32
UPD431000AGW-B10	NEC	获取价格	Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32
UPD431000AGW-B12	NEC	获取价格	1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT
UPD431000AGW-B12	RENESAS	获取价格	128KX8 STANDARD SRAM, 120ns, PDSO32, 0.525 INCH, PLASTIC, SOP-32
UPD431000AGW-B15	NEC	获取价格	1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT
UPD431000AGW-B15-A	RENESAS	获取价格	128KX8 STANDARD SRAM, 150ns, PDSO32, 0.525 INCH, PLASTIC, SOP-32
UPD431000AGZ-10-KJH	ETC	获取价格	x8 SRAM
UPD431000AGZ-10-KKH	ETC	获取价格	x8 SRAM