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UPC2766GR-E1

更新时间: 2024-11-18 03:06:03
品牌 Logo 应用领域
日电电子 - NEC 射频调制器射频解调器微波调制器微波解调器射频和微波
页数 文件大小 规格书
7页 76K
描述
WIDEBAND IQ DEMODULATOR FOR DIGITAL RECEIVERS

UPC2766GR-E1 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.83Is Samacsys:N
特性阻抗:50 Ω构造:COMPONENT
调制技术:I/Q最大工作频率:1000 MHz
最小工作频率:最高工作温度:85 °C
最低工作温度:-40 °C射频/微波设备类型:DEMODULATOR
Base Number Matches:1

UPC2766GR-E1 数据手册

 浏览型号UPC2766GR-E1的Datasheet PDF文件第2页浏览型号UPC2766GR-E1的Datasheet PDF文件第3页浏览型号UPC2766GR-E1的Datasheet PDF文件第4页浏览型号UPC2766GR-E1的Datasheet PDF文件第5页浏览型号UPC2766GR-E1的Datasheet PDF文件第6页浏览型号UPC2766GR-E1的Datasheet PDF文件第7页 
WIDEBAND IQ DEMODULATOR  
FOR DIGITAL RECEIVERS  
UPC2766GR  
FUNCTIONAL BLOCK DIAGRAM  
FEATURES  
• BROADBAND OPERATION  
RF & LO DC to 1 GHz  
IF (IQ) DC to 100 MHz  
I out  
I out  
I BiasTrim  
1
20  
19  
WIDEBAND IQ PHASE AND AMPLITUDE MATCHING  
Amplitude Matching: ±0.3 dB Typical  
Phase Matching: ±0.3° (driven in phase)  
2
3
4
5
6
7
V
CC (IFI)  
GND (IF  
LO (I)  
I
)
V
CC (RF)  
18  
17  
16  
AGC DYNAMIC RANGE:  
30 dB Typical  
GND (RF)  
LOW DISTORTION:  
30 dBc Typical  
RFin  
RFin  
LO (I)  
SMALL SSOP 20 PACKAGE  
15  
14  
TAPE AND REEL PACKAGING AVAILABLE  
LO (Q)  
LO (Q)  
GND(RF)  
DESCRIPTION  
The UPC2766GR Silicon MMIC Wideband IQ Demodulator  
was manufactured with the NESAT III MMIC process. The  
NESAT III process produces transistors with fT approaching  
20 GHz. The device was designed specifically for digital video  
and data receivers. The IC consists of a wide band RF  
amplifier, Gain Control amplifier, dual balanced mixers, LO  
buffers, and I & Q output buffer amplifiers.  
V
AGC  
8
9
13 GND(IF  
Q
)
12  
V
CC (IFQ)  
Qout  
Qout  
11  
Q Bias Trim  
10  
NEC's stringent quality assurance and test procedures en-  
sure the highest reliability and performance.  
ELECTRICAL CHARACTERISTICS1 (TA = 25°C, VCC = 5 V, ZL = 50 )  
PART NUMBER  
UPC2766GR  
PACKAGE OUTLINE  
S20 (SSOP 20)  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
mA  
MIN  
TYP  
60  
MAX  
ICC  
fRF  
Circuit Current (no signal)  
78  
RF Input Bandwidth2 fIF = 40 MHz, fRF > fLO, 3 dB down  
IF Output Bandwidth3 fRF = 480 MHz, fRF> fLO, 3 dB down, VAGC = 0 V  
Conversion Gain  
MHz  
DC-750  
DC-1000  
fIF  
MHz  
dB  
200  
20  
CG  
NF  
IM3  
15  
25  
Noise Figure  
dB  
21  
3rd Order Intermodulation Distortion  
fRF1 = 480 MHz, fRF2 = 490 MHz, fLO = 440 MHz, PIN = -20 dBm, VAGC = 1 V dBc  
30  
±0.3  
±0.3  
45  
∆Φ  
G  
IQ Phase Balance (LO driven in phase)  
IQ Amplitude Balance  
deg  
dB  
±1.5  
±0.5  
GAGC  
LO-RF  
LO-IF  
PSAT  
VO  
AGC Range, VAGC = 0-5 V  
LO to RF Isolation  
dB  
40  
dB  
55  
LO to IF Isolation  
dB  
10  
Saturated Output Level  
dBm  
VP-P  
+2  
Saturated Output Voltage (ZL = 250 //2pF)  
1.2  
1.5  
Notes:  
1. fRF = 480 MHz, fIF = 40 MHz, PLO = -10 dBm, PRF = -30 dBm, VAGC = 0 V, fRF > fLO unless otherwise specified.  
2. RF Bandwidth defined as 3 dB down from response at fRF = 40 MHz.  
3. IF Bandwidth defined as 3 dB down from response at fIF = 10 MHz.  

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