Datasheet > UPC2776T-E3

UPC2776T-E3

更新时间： 2024-01-06 14:46:56

品牌	Logo	应用领域
日电电子 - NEC		射频微波
页数	文件大小	规格书
3页	94K
描述
Wide Band Low Power Amplifier, 2700MHz Max,

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技术参数
数据手册

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UPC2776T-E3 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.81	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	21 dB
最大工作频率：	2700 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	WIDE BAND LOW POWER
Base Number Matches：	1

UPC2776T-E3 数据手册

PRELIMINARY DATA SHEET

2.7 GHz SILICON MIMIC

WIDE BAND AMPLIFIER

UPC2776T

FEATURES

GAIN vs. FREQUENCY

•

WIDE FREQUENCY RESPONSE: 2.7 GHz

FLAT GAIN RESPONSE: ±1.0 dB

HIGH GAIN: 23 dB

MEDIUM OUTPUT POWER: P1dB: 6.0 dBm @ 1.0 GHz

5 V SINGLE SUPPLY VOLTAGE

SMALL SURFACE MOUNT PACKAGE : T06

TAPE AND REEL PACKAGING AVAILABLE

DESCRIPTION AND APPLICATIONS

0.5

1.0

1.5

2.0

2.5

3.0

The UPC2776T is a Silicon Monolithic integrated circuit

manufactured using the NESAT III process. This device is

suitable for wide band IF blocks due to its high gain and flat

response. The UPC2776T is designed as a low cost IC gain

stage in DBS, TVRO, PCS, WLAN and other communication

receivers.

Frequency, f (GHz)

ELECTRICAL CHARACTERISTICS (VCC = 5.0 V, TA = 25 °C, ZIN = ZOUT = 50 Ω)

PART NUMBER

PACKAGE OUTLINE

UPC2776T

TO6

SYMBOLS

PARAMETERS AND CONDITIONS

Circuit Current (no signal)

UNITS

MIN

TYP

MAX

ICC

Small Signal Gain, f = 1 GHz

Upper Limit Operating Frequency

GHz

2.3

2.7

(The gain at fU is 3 dB down from the gain at 0.1 GHz)

∆GS

P1dB

Gain Flatness, f = 0.1 ~ 2.0 GHz

Output Power at 1 dB Compression f = 1 GHz

Noise Figure, f = 1 GHz

dBm

±1.0

+6.0

6.0

7.5

RLIN

RLOUT

ISOL

PSAT

IM3

Input Return Loss, f = 1 GHz

Output return Loss, f = 1 GHz

Isolation, f = 1 GHz

4.5

Saturated Output Power, f = 1 GHz

dBm

dBc

8.5

-30

3rd Order Intermodulation Distortion, f = 1 GHz

PO = 0 dBm each tone, f1 = 1000 MHz, f2 = 1002 MHz

RTH

Thermal Resistance (Junction to Ambient)

°C/W

200

California Eastern Laboratories

12 3

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