BIPOLAR ANALOG INTEGRATED CIRCUITS
UPC2711TB, UPC2712TB
5 V, SUPER MINIMOLD
SILICON MMIC WIDEBAND AMPLIFIER
TYPICAL PERFORMANCE CURVES
FEATURES
• HIGH DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT- 363 package
GAIN vs. FREQUENCY
25
• SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V
UPC2712TB
• WIDEBAND RESPONSE:
UPC2711TB: fu = 2.9 GHz TYP
UPC2712TB: fu = 2.6 GHz TYP
20
15
• POWER GAIN:
UPC2711TB
UPC2711TB: GP = 13 dB TYP
UPC2712TB: GP = 20 dB TYP
10
5
DESCRIPTION
NEC's UPC2711TB and UPC2712TB are Silicon MMIC
Wideband Amplifiers manufactured using NEC's 20 GHz fT
NESATTM III silicon bipolar process. These devices are de-
signed for use as buffer amps in DBS tuners. The UPC2711/
12TB are pin compatible and have comparable performance
as the larger UPC2711/12T, so they are suitable for use as a
replacement to help reduce system size. These IC's are
housed in a 6 pin super minimold or SOT-363 package.
0.5
1.0
1.5
2.0
2.5
3.0
Frequency, f (GHz)
NEC's stringent quality assurance and test procedure ensure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5.0 V, ZL = ZS = 50 W)
PART NUMBER
PACKAGE OUTLINE
UPC2711TB
S06
UPC2712TB
S06
SYMBOLS
PARAMETERS AND CONDITIONS
Circuit Current (no signal)
UNITS
mA
MIN
TYP
12
MAX
15
MIN
9
TYP
12
MAX
15
ICC
GP
fU
9
Power Gain, f = 1 GHz
dB
11
13
16.5
18
20
23.5
Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 100 MHz)
GHz
dB
2.7
-2
2.9
±0.8
+1
2.2
0
2.6
±0.8
+3
∆GP
Gain Flatness, f = 0.1 GHz to 2.5 GHz
PO(SAT)
Maximum Output Level, f = 1 GHz, PIN = 0 dBm
dBm
NF
Noise Figure, f = 1 GHz
dB
dB
5
6.5
4.5
12
6
RLIN
Input Return Loss, f = 1 GHz
20
25
9
RLOUT
ISOL
Output Return Loss, f = 1 GHz
Isolation, f = 1 GHz
dB
dB
9
12
30
10
28
13
33
25
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 22, 2005