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UPC2712TB PDF预览

UPC2712TB

更新时间: 2024-10-13 22:41:43
品牌 Logo 应用领域
日电电子 - NEC 射频和微波射频放大器微波放大器
页数 文件大小 规格书
9页 69K
描述
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

UPC2712TB 技术参数

是否Rohs认证:不符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.7
Is Samacsys:N其他特性:HIGH RELIABILITY
特性阻抗:50 Ω构造:COMPONENT
增益:30 dB最大输入功率 (CW):10 dBm
JESD-609代码:e0最大工作频率:2600 MHz
最高工作温度:85 °C最低工作温度:-40 °C
射频/微波设备类型:WIDE BAND LOW POWER端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

UPC2712TB 数据手册

 浏览型号UPC2712TB的Datasheet PDF文件第2页浏览型号UPC2712TB的Datasheet PDF文件第3页浏览型号UPC2712TB的Datasheet PDF文件第4页浏览型号UPC2712TB的Datasheet PDF文件第5页浏览型号UPC2712TB的Datasheet PDF文件第6页浏览型号UPC2712TB的Datasheet PDF文件第7页 
UPC2711TB  
UPC2712TB  
5 V, SUPER MINIMOLD  
SILICON MMIC WIDEBAND AMPLIFIER  
FEATURES  
TYPICAL PERFORMANCE CURVES  
• HIGH DENSITY SURFACE MOUNTING:  
6 pin super minimold or SOT- 363 package  
GAIN vs. FREQUENCY  
25  
UPC2712TB  
• SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V  
• WIDEBAND RESPONSE:  
UPC2711TB: fu = 2.9 GHz TYP  
UPC2712TB: fu = 2.6 GHz TYP  
20  
15  
• POWER GAIN:  
UPC2711TB  
UPC2711TB: GP = 13 dB TYP  
UPC2712TB: GP = 20 dB TYP  
10  
5
DESCRIPTION  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
TheUPC2711TBandUPC2712TBareSiliconMMICWideband  
Amplifiers manufactured using NEC's 20 GHz fT NESATTM III  
siliconbipolarprocess. Thesedevicesaredesignedforuseas  
buffer amps in DBS tuners. The UPC2711/12TB are pin  
compatible and have comparable performance as the larger  
UPC2711/12T, so they are suitable for use as a replacement  
to help reduce system size. These IC's are housed in a 6 pin  
super minimold or SOT-363 package.  
Frequency, f (GHz)  
NEC's stringent quality assurance and test procedure ensure  
the highest reliability and performance.  
ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5.0 V, ZL = ZS = 50 )  
PART NUMBER  
PACKAGE OUTLINE  
UPC2711TB  
S06  
UPC2712TB  
S06  
SYMBOLS  
PARAMETERS AND CONDITIONS  
Circuit Current (no signal)  
UNITS  
mA  
MIN  
9
TYP  
12  
MAX  
15  
MIN  
9
TYP  
12  
MAX  
15  
ICC  
GP  
fU  
Power Gain, f = 1 GHz  
dB  
11  
13  
16.5  
18  
20  
23.5  
Upper Limit Operating Frequency  
(The gain at fU is 3 dB down from the gain at 100 MHz)  
GHz  
dB  
2.7  
-2  
2.9  
±0.8  
+1  
2.2  
0
2.6  
±0.8  
+3  
GP  
Gain Flatness, f = 0.1 GHz to 2.5 GHz  
PO(SAT)  
Maximum Output Level, f = 1 GHz, PIN = 0 dBm  
dBm  
NF  
Noise Figure, f = 1 GHz  
dB  
dB  
5
6.5  
4.5  
12  
6
RLIN  
Input Return Loss, f = 1 GHz  
20  
25  
9
RLOUT  
ISOL  
Output Return Loss, f = 1 GHz  
Isolation, f = 1 GHz  
dB  
dB  
9
12  
30  
10  
28  
13  
33  
25  
California Eastern Laboratories  

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