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UPA811T-T1-A PDF预览

UPA811T-T1-A

更新时间： 2024-01-27 14:04:42
品牌 Logo 应用领域
CEL 晶体晶体管光电二极管ISM频段放大器
页数 文件大小 规格书
4页 158K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

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中文翻译

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UPA811T-T1-A 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：SMALL OUTLINE, R-PDSO-G6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.12
其他特性：LOW NOISE最大集电极电流 (IC)：0.035 A
基于收集器的最大容量：0.7 pF集电极-发射极最大电压：10 V
配置：SEPARATE, 2 ELEMENTS最高频带：ULTRA HIGH FREQUENCY BAND
JESD-30 代码：R-PDSO-G6JESD-609代码：e6
元件数量：2端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子面层：TIN BISMUTH
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：8000 MHz
Base Number Matches：1

UPA811T-T1-A 数据手册

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NPN SILICON HIGH  
FREQUENCY TRANSISTOR  
UPA811T  
OUTLINE DIMENSIONS (Units in mm)  
FEATURES  
•
•
•
•
SMALL PACKAGE STYLE:  
2 NE680 Die in a 2 mm x 1.25 mm package  
PACKAGE OUTLINE S06  
(Top View)  
LOW NOISE FIGURE:  
NF = 1.9 dB TYP at 2 GHz  
2.1 ± 0.1  
HIGH GAIN:  
|S21E|2 = 7.5 dB TYP at 2 GHz  
1.25 ± 0.1  
EXCELLENT LOW VOLTAGE, LOW CURRENT  
PERFORMANCE  
1
2
6
5
0.65  
2.0 ± 0.2  
0.2 (All Leads)  
DESCRIPTION  
1.3  
NEC's UPA811T is two NPN high frequency silicon epitaxial  
transistors encapsulated in an ultra small 6 pin SMT package.  
Each transistor is independently mounted and easily config-  
ured for either dual transistor or cascode operation. The high  
fT, low voltage bias and small size make this device ideally  
suited for pager and other hand-held wireless applications.  
3
4
0.9 ± 0.1  
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)  
0.7  
+0.10  
- 0.05  
0.15  
SYMBOLS  
VCBO  
VCEO  
VEBO  
IC  
PARAMETERS  
UNITS  
RATINGS  
0 ~ 0.1  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
V
V
20  
10  
1.5  
35  
PIN OUT  
V
1. Collector Transistor 1  
2. Base Transistor 2  
3. Collector Transistor 2  
4. Emitter Transistor 2  
5. Emitter Transistor 1  
6. Base Transistor 1  
mA  
PT  
Total Power Dissipation  
1 Die  
2 Die  
mW  
mW  
110  
200  
TJ  
TSTG  
Junction Temperature  
Storage Temperature  
°C  
°C  
150  
Note:  
-65 to +150  
Pin 3 is identified with a circle on the bottom of the package.  
Note:  
1. Operation in excess of any one of these parameters may result  
in permanent damage.  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
UPA811T  
S06  
SYMBOLS  
ICBO  
PARAMETERS AND CONDITIONS  
Collector Cutoff Current at VCB = 10 V, IE = 0  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
UNITS  
µA  
MIN  
TYP  
MAX  
1.0  
IEBO  
µA  
1.0  
1
hFE  
Forward Current Gain at VCE = 3 V, IC = 5 mA  
Gain Bandwidth at VCE = 3 V, IC = 5 mA  
80  
120  
8.0  
0.3  
7.5  
1.9  
200  
fT  
Cre2  
GHz  
pF  
5.5  
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz  
Insertion Power Gain at VCE = 3 V, IC = 5 mA, f = 2 GHz  
Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz  
0.7  
3.2  
|S21E|2  
dB  
5.5  
NF  
dB  
Notes:  
1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.  
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.  
For Tape and Reel version use part number UPA811T-T1, 3K per reel.  
California Eastern Laboratories  
1234

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