Datasheet > UNR611F(UN611F)

UNR611F(UN611F)

更新时间： 2024-11-20 23:39:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
14页	254K
描述
Composite Device - Transistors with built-in Resistor

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中文翻译

获取价格

数据手册

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UNR611F(UN611F) 数据手册

Transistors with built-in Resistor

UNR6111/6112/6113/6114/6115/6116/6117/

6118/6119/6110/611D/611E/611F/611H/611L

(UN6111/6112/6113/6114/6115/6116/6117/6118/6119/

6110/611D/611E/611F/611H/611L)

Unit: mm

6.9±±.1

2.5±±.1

(±.8)

Silicon PNP epitaxial planer transistor

(±.7)

(4.±)

For digital circuits

±.65 max.

Features

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

MT-1 type package, allowing supply with the radial taping.

+±.1±

±.45

–±.±5

1.±5±±.±5

2.5±±.5

Resistance by Part Number

2.5±±.5

(R₁)

10kΩ

22kΩ

47kΩ

10kΩ

4.7kΩ

22kΩ

0.51kΩ

1kΩ

47kΩ

4.7kΩ

2.2kΩ

4.7kΩ

(R₂)

10kΩ

22kΩ

47kΩ

—

1 : Emitter

2 : Collector

3 : Base

UNR6111

UNR6112

UNR6113

UNR6114

UNR6115

UNR6116

UNR6117

UNR6118

UNR6119

UNR6110

UNR611D

UNR611E

UNR611F

UNR611H

UNR611L

MT-1-A1 Package

—

Internal Connection

5.1kΩ

10kΩ

—

10kΩ

22kΩ

10kΩ

4.7kΩ

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

–50

Unit

Collector to base voltage

Collector to emitter voltage

Collector current

–50

–100

˚C

Total power dissipation

Junction temperature

Storage temperature

P_T

400

T_j

150

T_stg

–55 to +150

˚C

Note) The Part numbers in the Parenthesis show conventional part number.

12 3 4 5 6 7...14

中文翻译

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UNR611L	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3
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UNR6121(UN6121)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR6122	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 500MA I(C) \| SC-71VAR
UNR6122(UN6122)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR6123	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 500MA I(C) \| SC-71VAR