Datasheet > UNR5112(UN5112)

UNR5112(UN5112)

更新时间： 2024-11-13 23:39:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
18页	632K
描述
Composite Device - Transistors with built-in Resistor

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中文翻译

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数据手册

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UNR5112(UN5112) 数据手册

Transistors with built-in Resistor

UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/

511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z

(UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/511D/511E/511F/

511H/511L/511M/511N/511T/511V/511Z)

Silicon PNP epitaxial planer transistor

For digital circuits

Unit: mm

+±.1±

–±.±5

+±.1

–±.±

±.15

±.3

Features

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

(±.65) (±.65)

S-Mini type package, allowing automatic insertion through tape

packing and magazine packing.

1.3±±.1

2.±±±.2

1±°

Resistance by Part Number

Marking Symbol (R₁)

(R₂)

10kΩ

22kΩ

47kΩ

—

5.1kΩ

10kΩ

—

10kΩ

22kΩ

10kΩ

4.7kΩ

47kΩ

2.2kΩ

22kΩ

UNR5111

UNR5112

UNR5113

UNR5114

UNR5115

UNR5116

UNR5117

UNR5118

UNR5119

UNR5110

UNR511D

UNR511E

UNR511F

UNR511H

UNR511L

UNR511M

UNR511N

UNR511T

UNR511V

UNR511Z

10kΩ

22kΩ

47kΩ

10kΩ

4.7kΩ

22kΩ

0.51Ω

1kΩ

47kΩ

4.7kΩ

2.2kΩ

4.7kΩ

2.2kΩ

4.7kΩ

22kΩ

2.2kΩ

4.7kΩ

1 : Base

2 : Emitter

3 : Collector

EIAJ : SC–70

SMini3-G1 Package

Internal Connection

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

–50

Unit

Collector to base voltage

Collector to emitter voltage

Collector current

–50

–100

˚C

Total power dissipation

Junction temperature

Storage temperature

P_T

150

T_j

150

T_stg

–55 to +150

˚C

Note) The Part numbers in the Parenthesis show conventional part number.

12 3 4 5 6 7...18

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与UNR5112(UN5112)相关器件

型号	品牌	获取价格	描述	数据表
UNR5112\|UN5112	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR5112G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
UNR5112Q	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SMINI3-
UNR5112R	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SMINI3-
UNR5113	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR5113(UN5113)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR5113\|UN5113	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR5113G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
UNR5113GQ	PANASONIC	获取价格	暂无描述
UNR5113GS	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO