5秒后页面跳转
UNR121D PDF预览

UNR121D

更新时间: 2024-10-13 22:17:23
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
14页 340K
描述
Silicon NPN epitaxial planar type

UNR121D 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 0.21最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

UNR121D 数据手册

 浏览型号UNR121D的Datasheet PDF文件第2页浏览型号UNR121D的Datasheet PDF文件第3页浏览型号UNR121D的Datasheet PDF文件第4页浏览型号UNR121D的Datasheet PDF文件第5页浏览型号UNR121D的Datasheet PDF文件第6页浏览型号UNR121D的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR121x Series (UN121x Series)  
Silicon NPN epitaxial planar type  
Unit: mm  
For digital circuits  
2.5 0.1  
6.9 0.1  
(1.5)  
(1.5)  
(1.0)  
Features  
R 0.9  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts  
R 0.7  
M type package allowing easy automatic and manual insertion as  
well as stand-alone fixing to the printed circuit board  
(0.85)  
0.45 0.05  
Resistance by Part Number  
0.55 0.1  
(R1)  
(R2)  
UNR1210 (UN1210)  
UNR1211 (UN1211)  
UNR1212 (UN1212)  
UNR1213 (UN1213)  
UNR1214 (UN1214)  
UNR1215 (UN1215)  
UNR1216 (UN1216)  
UNR1217 (UN1217)  
UNR1218 (UN1218)  
UNR1219 (UN1219)  
UNR121D (UN121D)  
UNR121E (UN121E)  
UNR121F (UN121F)  
UNR121K (UN121K)  
UNR121L (UN121L)  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
47 kΩ  
47 kΩ  
4.7 kΩ  
10 kΩ  
4.7 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
3
2
1
1: Base  
2: Collector  
3: Emitter  
(2.5) (2.5)  
M-A1 Package  
Internal Connection  
R1  
B
5.1 kΩ  
10 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
4.7 kΩ  
4.7 kΩ  
C
E
R2  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
100  
mA  
mW  
°C  
400  
Total power dissipation  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55 to +150  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: October 2003  
SJH00003BED  
1

与UNR121D相关器件

型号 品牌 获取价格 描述 数据表
UNR121D(UN121D) ETC

获取价格

複合デバイス - 抵抗内蔵型トランジスタ
UNR121D|UN121D ETC

获取价格

Composite Device - Transistors with built-in Resistor
UNR121DQ PANASONIC

获取价格

暂无描述
UNR121DR PANASONIC

获取价格

Transistor
UNR121DS PANASONIC

获取价格

Transistor
UNR121E PANASONIC

获取价格

Silicon NPN epitaxial planar type
UNR121E(UN121E) ETC

获取价格

複合デバイス - 抵抗内蔵型トランジスタ
UNR121E|UN121E ETC

获取价格

Composite Device - Transistors with built-in Resistor
UNR121EQ PANASONIC

获取价格

Transistor
UNR121ER PANASONIC

获取价格

Transistor