生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.84 |
其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 0.21 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 30 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.4 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Small Signal | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 80 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UNR121D(UN121D) | ETC |
获取价格 |
複合デバイス - 抵抗内蔵型トランジスタ | |
UNR121D|UN121D | ETC |
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Composite Device - Transistors with built-in Resistor | |
UNR121DQ | PANASONIC |
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暂无描述 | |
UNR121DR | PANASONIC |
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Transistor | |
UNR121DS | PANASONIC |
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Transistor | |
UNR121E | PANASONIC |
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Silicon NPN epitaxial planar type | |
UNR121E(UN121E) | ETC |
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複合デバイス - 抵抗内蔵型トランジスタ | |
UNR121E|UN121E | ETC |
获取价格 |
Composite Device - Transistors with built-in Resistor | |
UNR121EQ | PANASONIC |
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Transistor | |
UNR121ER | PANASONIC |
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Transistor |