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UNR111E|UN111E PDF预览

UNR111E|UN111E

更新时间: 2024-10-13 23:39:27
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
14页 346K
描述
Composite Device - Transistors with built-in Resistor

UNR111E|UN111E 数据手册

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Transistors with built-in Resistor  
UNR111x Series (UN111x Series)  
Silicon PNP epitaxial planar transistor  
Unit: mm  
For digital circuits  
2.5 0.1  
6.9 0.1  
(1.5)  
(1.5)  
(1.0)  
Features  
R 0.9  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts  
R 0.7  
M type package allowing easy automatic and manual insertion as  
well as stand-alone fixing to the printed circuit board.  
(0.85)  
0.45 0.05  
Resistance by Part Number  
0.55 0.1  
(R1)  
(R2)  
UNR1110 (UN1110)  
UNR1111 (UN1111)  
UNR1112 (UN1112)  
UNR1113 (UN1113)  
UNR1114 (UN1114)  
UNR1115 (UN1115)  
UNR1116 (UN1116)  
UNR1117 (UN1117)  
UNR1118 (UN1118)  
UNR1119 (UN1119)  
UNR111D (UN111D)  
UNR111E (UN111E)  
UNR111F (UN111F)  
UNR111H (UN111H)  
UNR111L (UN111L)  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
47 kΩ  
47 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
3
2
1
1: Base  
2: Collector  
3: Emitter  
(2.5) (2.5)  
M-A1 Package  
Internal Connection  
R1  
B
5.1 kΩ  
10 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
C
E
R2  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
100  
mA  
mW  
°C  
400  
Total power dissipation  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55 to +150  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: October 2003  
SJH00001BED  
1

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