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UNR111T PDF预览

UNR111T

更新时间: 2024-10-14 03:23:23
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
5页 127K
描述
Silicon NPN, PNP epitaxial planar type (Tr1,2)

UNR111T 数据手册

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Composite Transistors  
UP03396  
Silicon NPN epitaxial planar type (Tr1)  
Silicon PNP epitaxial planar type (Tr2)  
Unit: mm  
For digital circuits  
(0.30)  
0.20 +00..0025  
0.10 0.02  
5
4
3
Features  
Two elements incorporated into one package  
(Transistors with built-in resistor)  
1
2
(0.50)(0.50)  
1.00 0.05  
1.60 0.05  
Reduction of the mounting area and assembly cost by one half  
Display at No.1 lead  
Basic Part Number  
UNR111T + UNR1211  
5˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Emitter (Tr2)  
4: Collector (Tr2)  
5: Collector (Tr1)  
Base (Tr2)  
Tr1  
Tr2  
Collector-base voltage  
(Emitter open)  
VCBO  
50  
V
Collector-emitter voltage  
(Base open)  
VCEO  
50  
V
SSMini5-F2 Package  
Marking Symbol: 6P  
Internal Connection  
Collector current  
IC  
100  
mA  
V
Collector-base voltage  
(Emitter open)  
VCBO  
50  
(C1,B2)  
5
(C2)  
4
Collector-emitter voltage  
(Base open)  
VCEO  
50  
V
R1  
Collector current  
IC  
PT  
Tj  
100  
125  
mA  
mW  
°C  
22 kΩ  
Tr1  
Tr2  
Overall Total power dissipation  
Junction temperature  
R2  
10 kΩ  
R2  
47 kΩ  
125  
R1  
10 kΩ  
1
2
3
Storage temperature  
Tstg  
55 to +125  
°C  
(E1) (B1) (E2)  
Publication date: August 2004  
SJJ00295AED  
1

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